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Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates
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- Journal:
- MRS Advances / Volume 1 / Issue 50 / 2016
- Published online by Cambridge University Press:
- 08 June 2016, pp. 3415-3420
- Print publication:
- 2016
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- Article
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