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Ferroelectric Thin films V

Ferroelectric Thin films V

Volume 433

$38.99 (Z)

Part of MRS Proceedings

  • Date Published: November 1996
  • availability: Temporarily unavailable - no date available
  • format: Hardback
  • isbn: 9781558993365

$38.99 (Z)
Hardback

Temporarily unavailable - no date available
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  • This book features worldwide advancements that have been made in both the processing technology and fundamental understanding of ferroelectric thin films. There is a strong emphasis on process integration issues and on gaining an enhanced understanding of the behavior of layered structure perovskites for nonvolatile memory applications. The book also addresses the processing of high-dielectric constant thin films for dynamic random-access memory applications, especially by plasma-assisted metalorganic chemical vapor deposition. The development of electrode-processing techniques for improved properties, the role of defects in ferroelectric thin-film degradation, structure-property relationships, domains and size effects in ferroelectric thin films, and the pyroelectric, optical and field effect device applications of these materials are also highlighted. The perspectives of ARPA and ONR on the future of ferroelectric technologies are noted.

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    Product details

    • Date Published: November 1996
    • format: Hardback
    • isbn: 9781558993365
    • dimensions: 230 x 156 mm
    • availability: Temporarily unavailable - no date available
  • Editors

    Seshu B. Desu, Virginia Tech Blacksburg

    Robert E. Jones, Motorola Austin, Texas

    R. Ramesh, University of Maryland, College Park

    Bruce A. Tuttle, Sandia National Laboratories, Alburquerque

    In K. Yoo, Samsung Advanced Institute of Technology Suwon

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