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Materials and Technology for Nonvolatile Memories

Materials and Technology for Nonvolatile Memories

Volume 1729

$113.00 (C)

Part of MRS Proceedings

Kumar Virwani, Geoffrey W. Burr, Pritish Narayanan, Bülent Kurdi, Vassilios Ioannou-Sougleridis, Nikolaos Nikolaou, Panagiotis Dimitrakis, Pascal Normand, Dimitrios Skarlatos, Anastasios Travlos, Kaupo Kukli, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Yogesh Sharma, Pankaj Misra, Shojan P. Pavunny, Ram S. Katiyar, Michael Lübben, Panagiotis Karakolis, Anja Wedig, Ilia Valov, Tohru Tsuruoka, Tsuyoshi Hasegawa, Masakazu Aono, T. Ohyanagi, M. Kitamura, S. Kato, M. Araidai, N. Takaura, K. Shiraishi, Neeraj Panwar, Pankaj Kumbhare, Ajit K. Singh, N. Venkataramani, Udayan Ganguly, Brian L. Geist, Dmitri Strukov, Vladimir Kochergin, P. Bousoulas, I. Michelakaki, J. Giannopoulos, K. Giannakopoulos, D. Tsoukalas, Paritosh Meihar, Senthilkumar Rajarathinam, Shikhar Chouhan, Suhit Pai, Andreas Kaidatzis, Vasileios Psycharis, José Miguel García-Martín, Cristina Bran, Manuel Vázquez, Dimitrios Niarchos, Iori Tanabe, Haseeb Kazi, Yuan Cao, Jack L. Rodenburg, Takashi Komesu, Bin Dong, Frank L. Pasquale, M. Sky Driver, Jeffry A. Kelber, Peter A. Dowben, L. A. Delimova, E. V. Guschina, V. S. Yuferev, I. V. Grekhov, N. V. Zaiceva, N. V. Sharenkova, D. S. Seregin, K. A. Vorotilov, A. S. Sigov, Yoko Takada, Naoki Okamoto, Takeyasu Saito, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura, Koji Higuchi, Akira Kitajima, Hideo Iwai, Marina Shiokawa, Katsushi Izaki, Hiroshi Funakubo, Hiroshi Uchida, Anuja Datta, Devajyoti Mukherjee, Corisa Kons, Sarath Witanachchi, Pritish Mukherjee, Mahesh Hordagoda, Mikhail Dronov, Maria Kotova, Ivan Belogorohov, Panagiotis E. Keivanidis, Andrea di Donato, Davide Mencarelli, Alessandro Esposito, Tengling Ye, Guglielmo Lanzani, Giuseppe Venanzoni, Tiziana Pietrangelo, Antonio Morini, Marco Farina, Zane C. Gernhart, Juan A. Colón Santana, Lu Wang, Wai-Ning Mei, Chin Li Cheung, Toribio F. Otero, Jose G. Martinez
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  • Date Published: September 2015
  • availability: In stock
  • format: Hardback
  • isbn: 9781605117065

$ 113.00 (C)
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  • Symposium M, 'Materials and Technology for Nonvolatile Memories', was held November 30–December 5 at the 2014 MRS Fall Meeting in Boston, Massachusetts, which was a follow up of previous symposia on nonvolatile memories. Main research areas featured in Symposium M were advanced Flash memories, organic memories, resistive switching memories (ReRAM), magnetoresistive random access memories (MRAM), ferroelectric random access memories (FeRAM), phase-change memories, as well as emerging materials and technologies for nonvolatile memories. In addition, a highly successful one-day tutorial session, 'Emerging Materials and Devices for Nonvolatile Memories', was conducted and included tutorials on ReRAM, polymer/organic materials, MRAM, and Flash memories. This symposium proceedings volume represents the recent advances and related material issues on various kinds of nonvolatile memory technologies. The papers in this volume are categorized according to each type of memory technology and are not in the order of the symposium presentations.

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    Product details

    • Date Published: September 2015
    • format: Hardback
    • isbn: 9781605117065
    • length: 152 pages
    • dimensions: 235 x 156 x 13 mm
    • weight: 0.35kg
    • contains: 95 b/w illus. 2 tables
    • availability: In stock
  • Table of Contents

    Part I. Advanced Flash Memories:
    1. Mixed-ionic-electronic-conduction (MIEC)-based access devices for 3D multilayer crosspoint memory
    2. MANOS erase performance dependence on nitrogen annealing conditions
    Part II. Resistive Switching Memories (ReRAM):
    3. Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications
    4. Influence of graphene interlayers on electrode-electrolyte interfaces in resistive random accesses memory cells
    5. Nanosecond fast switching processes observed in gapless-type, Ta2O5–based atomic switches
    6. XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics
    7. Effect of morphological change on unipolar and bipolar switching characteristics in Pr0.7Ca0.3MnO3 based RRAM
    8. Experimental and theoretical investigation of minimization of forming-induced variability in resistive memory devices
    9. Material and device parameters influencing multi-level resistive switching of room temperature grown titanium oxide layers
    10. A comprehensive study of effect of composition on resistive switching of HfxAl1-xOy based RRAM devices by combinatorial sputtering
    Part III. Magnetoresistive Random Access Memories (MRAM):
    11. Perpendicular magnetic anisotropy on W-based spin-orbit torque CoFeB | MgO MRAM stacks
    12. Strain induced super-paramagnetism in Cr2O3 in the ultra thin film limit
    Part IV. Ferroelectric Random Access Memories (FeRAM):
    13. Giant self-polarization in FeRAM element based on sol-gel PZT films
    14. The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties
    15. Chemical fluid deposition of Hf-Zr-O-based thin films using supercritical carbon dioxide fluid
    16. Ferroelectricity in strategically synthesized Pb-free LiNbO3-type ZnSnO3 nanostructure arrayed thick films
    17. Measurements of polarization switching in LiNbO3-type ZnSnO3/ZnO nanocomposite thin films
    Part V. Polymer Memories and Emerging Materials:
    18. Photo-controllable resistive memory based on polymer materials
    19. Determining the efficiency of fast ultrahigh-density writing of low-conductivity patterns on semiconducting polymers
    20. Photoelectron spectroscopy characterization and computational modeling of gadolinium nitride thin films synthesized by chemical vapor deposition
    21. Chemo-ionic-conformational memory from reactive dense gels: a way to explore new multivalent memories and brain memory.

  • Editors

    Panagiotis Dimitrakis, NCSR Demokritos

    Yoshihisa Fujisaki, Hitachi Ltd.

    Guohan Hu, IBM T J Watson Research Center, New York

    Eisuke Tokumitsu, JAIST

    Contributors

    Kumar Virwani, Geoffrey W. Burr, Pritish Narayanan, Bülent Kurdi, Vassilios Ioannou-Sougleridis, Nikolaos Nikolaou, Panagiotis Dimitrakis, Pascal Normand, Dimitrios Skarlatos, Anastasios Travlos, Kaupo Kukli, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Yogesh Sharma, Pankaj Misra, Shojan P. Pavunny, Ram S. Katiyar, Michael Lübben, Panagiotis Karakolis, Anja Wedig, Ilia Valov, Tohru Tsuruoka, Tsuyoshi Hasegawa, Masakazu Aono, T. Ohyanagi, M. Kitamura, S. Kato, M. Araidai, N. Takaura, K. Shiraishi, Neeraj Panwar, Pankaj Kumbhare, Ajit K. Singh, N. Venkataramani, Udayan Ganguly, Brian L. Geist, Dmitri Strukov, Vladimir Kochergin, P. Bousoulas, I. Michelakaki, J. Giannopoulos, K. Giannakopoulos, D. Tsoukalas, Paritosh Meihar, Senthilkumar Rajarathinam, Shikhar Chouhan, Suhit Pai, Andreas Kaidatzis, Vasileios Psycharis, José Miguel García-Martín, Cristina Bran, Manuel Vázquez, Dimitrios Niarchos, Iori Tanabe, Haseeb Kazi, Yuan Cao, Jack L. Rodenburg, Takashi Komesu, Bin Dong, Frank L. Pasquale, M. Sky Driver, Jeffry A. Kelber, Peter A. Dowben, L. A. Delimova, E. V. Guschina, V. S. Yuferev, I. V. Grekhov, N. V. Zaiceva, N. V. Sharenkova, D. S. Seregin, K. A. Vorotilov, A. S. Sigov, Yoko Takada, Naoki Okamoto, Takeyasu Saito, Kazuo Kondo, Takeshi Yoshimura, Norifumi Fujimura, Koji Higuchi, Akira Kitajima, Hideo Iwai, Marina Shiokawa, Katsushi Izaki, Hiroshi Funakubo, Hiroshi Uchida, Anuja Datta, Devajyoti Mukherjee, Corisa Kons, Sarath Witanachchi, Pritish Mukherjee, Mahesh Hordagoda, Mikhail Dronov, Maria Kotova, Ivan Belogorohov, Panagiotis E. Keivanidis, Andrea di Donato, Davide Mencarelli, Alessandro Esposito, Tengling Ye, Guglielmo Lanzani, Giuseppe Venanzoni, Tiziana Pietrangelo, Antonio Morini, Marco Farina, Zane C. Gernhart, Juan A. Colón Santana, Lu Wang, Wai-Ning Mei, Chin Li Cheung, Toribio F. Otero, Jose G. Martinez

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