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Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II

Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II

Volume 415

$39.99 (C)

Part of MRS Proceedings

  • Date Published: February 1996
  • availability: Temporarily unavailable - available from TBC
  • format: Hardback
  • isbn: 9781558993181

$39.99 (C)

Temporarily unavailable - available from TBC
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About the Authors
  • The use of high-performance ceramic materials in microelectronics holds the potential for the development of a wide range of novel, high-value products. For example, ferroelectric ceramic capacitors are key to the development of high-density ferroelectric nonvolatile memory (FRAM). High-dielectric constant para-electric capacitors are potentially useful for the production of high-density dynamic random access memory (DRAM) and for decoupling capacitors in high-speed microprocessors. Electro-optic materials are useful as waveguides, tunable filters and switches in advance communication applications. Researchers come together in this book to discuss both the application of metal-organic chemical vapor deposited (MOCVD) materials to microelectronics and the 'nuts and bolts' of the technique. A wide variety of opto-electronic, superconducting, ferroelectric and other advanced ceramic materials are discussed. Problems of dealing with low-volatility precursors, design of new precursors, and characterization of CVD processes are addressed. Topics include: nonoxide ceramics; precursor chemistry and delivery; process analysis and characterization; and oxide ceramics.

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    Product details

    • Date Published: February 1996
    • format: Hardback
    • isbn: 9781558993181
    • dimensions: 247 x 170 mm
    • weight: 0.641kg
    • availability: Temporarily unavailable - available from TBC
  • Editors

    David B. Beach, Oak Ridge National Laboratory Oak Ridge

    Peter C. Van Buskirk, Advanced Technology Materials, Inc. Danbury

    Seshu B. Desu, Virginia Tech, Blacksburg

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