Skip to content
Cart

Your Cart

×

You have 0 items in your cart.

Register Sign in Wishlist
Nonlinear Transistor Model Parameter Extraction Techniques

Nonlinear Transistor Model Parameter Extraction Techniques

$128.00 ( ) USD

Part of The Cambridge RF and Microwave Engineering Series

M. Rudolph, M. Iwamoto, J. Xu, D. E. Root, S. R. Nedeljkovic, W. J. Clausen, F. Kharabi, J. R. F. McMacken, J. M. Gering, C. Fager, K. Andersson, M. Ferndahl, J. Horn, J. Engelmann, F.-J. Schmückle, O. Jardel, R. Sommet, J.-P. Teyssier, R. Quéré, D. Schreurs, M. Myslinski, G. Crupi, P. Zampardi, Y. Yang, J. Hu, B. Li, M. Fredriksson, K. Kwok, H. Shao, M. Berroth
View all contributors
  • Date Published: November 2011
  • availability: This ISBN is for an eBook version which is distributed on our behalf by a third party.
  • format: Adobe eBook Reader
  • isbn: 9781139153669

$ 128.00 USD ( )
Adobe eBook Reader

You will be taken to ebooks.com for this purchase
Buy eBook Add to wishlist

Other available formats:
Hardback


Looking for an examination copy?

If you are interested in the title for your course we can consider offering an examination copy. To register your interest please contact collegesales@cambridge.org providing details of the course you are teaching.

Description
Product filter button
Description
Contents
Resources
Courses
About the Authors
  • Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

    • Provides a complete survey of state-of-the-art techniques and methods for accurate and reliable parameter extraction
    • Provides real-world examples and insights from a team of experts from industry and academia
    • Shows how similar approaches can be applied to different technologies, rather than focusing on just one specific technology
    Read more

    Reviews & endorsements

    "Modeling is at the heart of any modern design process and improvements in transistor modeling have made a significant, but often unrecognized, contribution to the wireless revolution impacting our daily lives. The authors and contributors have collaborated across academic and company boundaries to bring together the latest techniques in a comprehensive and practical review of transistor modeling. This book is destined to become the 'go to' reference on the subject." Mark Pierpoint, Agilent Technologies

    "Without accurate component models, even the most powerful circuit simulator cannot provide meaningful results. The old saying, 'Junk in-Junk out,' summarizes the process. The textbook, Nonlinear Transistor Model Parameter Extraction Techniques, contains a wealth of theoretical and practical information. It should be read by every active RF/Microwave circuit and as well as device designer." Les Besser, Author of COMPACT and Founder of Besser Associates

    "Nonlinear Transistor Model Parameter Extraction Techniques is an excellent book that covers this extremely important topic very well...the editors have done a thorough job in putting together a complete summary of the important issues in this area. For a range of device technologies, the main themes that need to be addressed including measurement, extraction, DC and non-linear modelling, noise modelling, thermal issues and package modelling are covered in a clear but detailed manner, by experts in each area. I would highly recommend this title." John Atherton, WIN Semiconductors

    "..a very nice guide to how the critical issues of model parameter of extraction are being solved right now and so it is a great resource for designers and modeling groups." - Alfy Riddle, IEEE Microwave Magazine, July/August 2012

    See more reviews

    Customer reviews

    Not yet reviewed

    Be the first to review

    Review was not posted due to profanity

    ×

    , create a review

    (If you're not , sign out)

    Please enter the right captcha value
    Please enter a star rating.
    Your review must be a minimum of 12 words.

    How do you rate this item?

    ×

    Product details

    • Date Published: November 2011
    • format: Adobe eBook Reader
    • isbn: 9781139153669
    • contains: 273 b/w illus. 10 tables
    • availability: This ISBN is for an eBook version which is distributed on our behalf by a third party.
  • Table of Contents

    1. Introduction M. Rudolph
    2. DC and thermal modeling: III-V FETs and HBTs M. Iwamoto, J. Xu and D. E. Root
    3. Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling S. R. Nedeljkovic, W. J. Clausen, F. Kharabi, J. R. F. McMacken and J. M. Gering
    4. Uncertainties in small-signal equivalent circuit modeling C. Fager, K. Andersson and M. Ferndahl
    5. The large-signal model: theoretical foundations, practical considerations, and recent trends D. E. Root, J. Horn, J. Xu and M. Iwamoto
    6. Large and packaged transistors J. Engelmann, F.-J. Schmückle and M. Rudolph
    7. Characterization and modeling of dispersive effects O. Jardel, R. Sommet, J.-P. Teyssier and R. Quéré
    8. Optimizing microwave measurements for model construction and validation D. Schreurs, M. Myslinski and G. Crupi
    9. Practical statistical simulation for efficient circuit design P. Zampardi, Y. Yang, J. Hu, B. Li, M. Fredriksson, K. Kwok and H. Shao
    10. Noise modeling M. Berroth.

  • Resources for

    Nonlinear Transistor Model Parameter Extraction Techniques

    General Resources

    Welcome to the resources site

    Here you will find free-of-charge online materials to accompany this book. The range of materials we provide across our academic and higher education titles are an integral part of the book package whether you are a student, instructor, researcher or professional.

    Find resources associated with this title

    Type Name Unlocked * Format Size

    Showing of

    Back to top

    *This title has one or more locked files and access is given only to instructors adopting the textbook for their class. We need to enforce this strictly so that solutions are not made available to students. To gain access to locked resources you either need first to sign in or register for an account.


    These resources are provided free of charge by Cambridge University Press with permission of the author of the corresponding work, but are subject to copyright. You are permitted to view, print and download these resources for your own personal use only, provided any copyright lines on the resources are not removed or altered in any way. Any other use, including but not limited to distribution of the resources in modified form, or via electronic or other media, is strictly prohibited unless you have permission from the author of the corresponding work and provided you give appropriate acknowledgement of the source.

    If you are having problems accessing these resources please email lecturers@cambridge.org

  • Editors

    Matthias Rudolph, Brandenburg University of Technology
    Matthias Rudolph is the Ulrich-L.-Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology, Cottbus, Germany. Prior to this, he worked at the Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik (FBH), Berlin, where he was responsible for modeling of GaN HEMTs and GaAs HBTs and heading the low-noise components group.

    Christian Fager, Chalmers University of Technology, Gothenberg
    Christian Fager is an Associate Professor at Chalmers University of Technology, Sweden, where he leads a research group focusing on energy efficient transmitters and power amplifiers for future wireless applications. In 2002 he received the Best Student Paper Award at the IEEE International Microwave Symposium for his research on uncertainties in transistor small signal models.

    David E. Root, Agilent Technologies, Santa Rosa
    David E. Root is Agilent Research Fellow and Measurement and Modeling Sciences Architect at Agilent Technologies, Inc., where he works on nonlinear device and behavioral modeling, large-signal simulation, and nonlinear measurements for new technical capabilities and business opportunities. He is a Fellow of the IEEE and in 2007 he received the 2007 IEEE ARFTG Technology Award.

    Contributors

    M. Rudolph, M. Iwamoto, J. Xu, D. E. Root, S. R. Nedeljkovic, W. J. Clausen, F. Kharabi, J. R. F. McMacken, J. M. Gering, C. Fager, K. Andersson, M. Ferndahl, J. Horn, J. Engelmann, F.-J. Schmückle, O. Jardel, R. Sommet, J.-P. Teyssier, R. Quéré, D. Schreurs, M. Myslinski, G. Crupi, P. Zampardi, Y. Yang, J. Hu, B. Li, M. Fredriksson, K. Kwok, H. Shao, M. Berroth

Sign In

Please sign in to access your account

Cancel

Not already registered? Create an account now. ×

Sorry, this resource is locked

Please register or sign in to request access. If you are having problems accessing these resources please email lecturers@cambridge.org

Register Sign in
Please note that this file is password protected. You will be asked to input your password on the next screen.

» Proceed

You are now leaving the Cambridge University Press website. Your eBook purchase and download will be completed by our partner www.ebooks.com. Please see the permission section of the www.ebooks.com catalogue page for details of the print & copy limits on our eBooks.

Continue ×

Continue ×

Continue ×

Find content that relates to you

This site uses cookies to improve your experience. Read more Close

Are you sure you want to delete your account?

This cannot be undone.

Cancel

Thank you for your feedback which will help us improve our service.

If you requested a response, we will make sure to get back to you shortly.

×
Please fill in the required fields in your feedback submission.
×