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Look Inside Delta-doping of Semiconductors

Delta-doping of Semiconductors

$89.99 (C)

E. F. Schubert, C. R. Proetto, K. H. Ploog, T. Makimoto, Y. Horikoshi, D. Ritter, I. Eisele, H.-J. Gossmann, H. S. Luftmann, H.-J. Gossmann, R. C. Newman, P. M. Koenraad, H. Yao, J. Wagne, D. Richards, W. T. Masselink, P. M.Koenraad, M. Asche, R. L. Headrick, L. C. Feldman, B. E. Weir, W.-P. Hong, K. Nakagawa, K. Yamaguchi, R. J. Malik
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  • Date Published: August 2005
  • availability: Available
  • format: Paperback
  • isbn: 9780521017961

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About the Authors
  • Doping profiles are a key element in the development of modern semiconductor technology. This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. After an introductory chapter sets out the basic theoretical and experimental concepts involved, the authors discuss the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth. They then present the techniques for characterizing doping distributions, followed by several chapters on the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering.

    • Comprehensive coverage of theory and experiment
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    Product details

    • Date Published: August 2005
    • format: Paperback
    • isbn: 9780521017961
    • length: 620 pages
    • dimensions: 247 x 190 x 31 mm
    • weight: 1.081kg
    • contains: 417 b/w illus. 20 tables
    • availability: Available
  • Table of Contents

    Part I:
    1. Introduction E. F. Schubert
    Part II:
    2. Electronic structure of delta-doped semiconductors C. R. Proetto
    Part III:
    3. Recent progress in delta-like confinement of impurities in GaAs K. H. Ploog
    4. Flow-rate modulation epitaxy (FME) of III-V semiconductors T. Makimoto and Y. Horikoshi
    5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors D. Ritter
    6. Solid phase epitaxy for delta-doping in silicon I. Eisele
    7. Low temperature MBE of silicon H.-J. Gossmann
    Part IV:
    8. Secondary ion mass spectrometry of delta-doped semiconductors H. S. Luftmann
    9. Capacitance-voltage profiling E. F. Schubert
    10. Redistribution of impurities in III-V semiconductors E. F. Schubert
    11. Dopant diffusion and segregation in delta-doped silicon films H.-J. Gossmann
    12. Characterisation of silicon and delta-doped structures in GaAs R. C. Newman
    13. The DX-center in silicon delta-doped GaAs and AlxGa1-xAs P. M. Koenraad
    Part V:
    14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert
    15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures J. Wagner and D. Richards
    16. Electron transport in delta-doped quantum wells W. T. Masselink
    17. Electron mobility in delta-doped layers P. M. Koenraad
    18. Hot electrons in delta-doped GaAs M. Asche
    19. Ordered delta-doping R. L. Headrick, L. C. Feldman and B. E. Weir
    Part IV:
    20. Delta-doped channel III-V field effect transistors (FETs) W.-P. Hong
    21. Selectively doped heterostructure devices E. F. Schubert
    22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi
    23. Planar doped barrier devices R. J. Malik
    24. Silicon interband and intersubband photodetectors I. Eisele
    25. Doping superlattice devices E. F. Schubert.

  • Editor

    E. F. Schubert, Boston University

    Contributors

    E. F. Schubert, C. R. Proetto, K. H. Ploog, T. Makimoto, Y. Horikoshi, D. Ritter, I. Eisele, H.-J. Gossmann, H. S. Luftmann, H.-J. Gossmann, R. C. Newman, P. M. Koenraad, H. Yao, J. Wagne, D. Richards, W. T. Masselink, P. M.Koenraad, M. Asche, R. L. Headrick, L. C. Feldman, B. E. Weir, W.-P. Hong, K. Nakagawa, K. Yamaguchi, R. J. Malik

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