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Photo-induced Defects in Semiconductors

$72.00 (P)

Part of Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

  • Date Published: March 2006
  • availability: Available
  • format: Paperback
  • isbn: 9780521024457

$ 72.00 (P)
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About the Authors
  • This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

    • Distinguished authors, both Fellows of the American Physical Society
    • First book to deal with this subject
    • Multidisciplinary subject, of interest to physicists, electrical engineers and materials scientists
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    Reviews & endorsements

    "This book by Redfield and Bube gives a comprehensive review of the subject. In my opinion, the authors review the most important PI defects in crystalline and amorphous semiconductors, focusing on existing models without mathematical complications and emphasizing the need for more sophisticated many-electron models....invaluable as an introduction for those who are new to the field and for graduate students." J. Abdulhalim, Optics & Photonics News

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    Product details

    • Date Published: March 2006
    • format: Paperback
    • isbn: 9780521024457
    • length: 232 pages
    • dimensions: 229 x 152 x 14 mm
    • weight: 0.35kg
    • contains: 106 b/w illus.
    • availability: Available
  • Table of Contents

    1. Introduction: metastable defects
    2. III–V compounds: DX2 and EL2 centers
    3. Other crystalline materials
    4. Hydrogenated amorphous silicon: properties of defects
    5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes
    6. Other amorphous semiconductors
    7. Photo-induced defect effects in devices
    References
    Index.

  • Authors

    David Redfield, Stanford University, California

    Richard H. Bube, Stanford University, California

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