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Crystal-Field Engineering of Solid-State Laser Materials

Crystal-Field Engineering of Solid-State Laser Materials

$209.99 (Z)

Part of Cambridge Studies in Modern Optics

  • Date Published: July 2000
  • availability: Temporarily unavailable - available from September 2015
  • format: Hardback
  • isbn: 9780521593496

$209.99 (Z)
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About the Authors
  • This book examines the underlying science and design of laser materials. It emphasizes the principles of crystal-field engineering and discusses the basic physical concepts that determine laser gain and nonlinear frequency conversion in optical crystals. Henderson and Bartram develop the predictive capabilities of crystal-field engineering to show how modification of the symmetry and composition of optical centers can improve laser performance. They also discuss applications of the principles of crystal-field engineering to a variety of optical crystals in relation to the performances of laser devices. This book will be of considerable interest to physical, chemical and material scientists and to engineers involved in the science and technology of solid state lasers.

    • Contains over 100 figures
    • Includes a concise review of the essential underlying science
    • Of considerable interest to physical, chemical and material scientists, and engineers
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    Product details

    • Date Published: July 2000
    • format: Hardback
    • isbn: 9780521593496
    • length: 414 pages
    • dimensions: 256 x 179 x 29 mm
    • weight: 0.93kg
    • contains: 124 b/w illus.
    • availability: Temporarily unavailable - available from September 2015
  • Table of Contents

    Preface
    1. An introduction to lasers
    2. Symmetry considerations
    3. Optical crystals: their structures, colours and growth
    4. Energy levels of ions in crystals
    5. Spectra of ions in crystals
    6. Radiationless transitions
    7. Energy transfer and excited state absorption
    8. Covalency
    9. Engineering the crystal field
    10. The crystal field engineered.

  • Authors

    Brian Henderson, University of Cambridge

    Ralph H. Bartram, Mansfield Center

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