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Home > Catalog > Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors
Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors
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Details

  • 193 b/w illus. 8 tables
  • Page extent: 424 pages
  • Size: 247 x 174 mm
  • Weight: 1.068 kg
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Paperback

 (ISBN-13: 9780521017893 | ISBN-10: 0521017890)

Manufactured on demand: supplied direct from the printer

$80.00 (C)

Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. This volume deals with complex nonlinear dynamics, pattern formation, and chaotic behavior in such systems. It bridges the gap between two well-established fields: the theory of dynamic systems and nonlinear charge transport in semiconductors. This unified approach helps reveal important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, such as current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

Contents

1. Semiconductors as continuous nonlinear dynamic systems; 2. Concepts of nonlinear charge transport in semiconductors; 3. Pattern formation and oscillatory instabilities in semiconductors; 4. Impact ionization induced impurity breakdown; 5. Nonlinear carrier dynamics in crossed electric and magnetic fields; 6. Stationary and oscillating domains in superlattices; 7. Spatio-temporal chaos.

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