In this work, the synthesis and thermoluminescence properties of new ZnO phosphors obtained by a chemical method are reported. Some samples were exposed to beta particle irradiation for doses ranging from 10.0 up to 6,400 Gy, and it was found that the thermoluminescence response as a function of dose is linear for doses below 200 Gy, and sublinear with no saturation clouds for greater doses. A broad shape glow curve with maximum located above 230 °C, that shifts to lower temperatures as dose increases, indicating that second order kinetics thermoluminescence processes are involved. The lower detection limit was estimated to be 13 Gy. We conclude that the phosphors under study are promising to develop dosimeters for high dose radiation dosimetry.

We have recently found that uranium and plutonium metals will react with nitrogen trifluoride (NF3) at temperatures below 120°C. These are the first reported instances of such low temperature fluorination reactions using NF3 and implicate metal catalyzed dissociation of the NF3 bond. We additionally present preliminary evidences for a surface mediated product distribution. Reaction of uranium metal with NF3 promotes products that are apparently determined by the concentration of the fluorinating reagent between temperatures of 60 to 120°C.

Measurements of the actual fluorine content x in the RO1−xFxFeAs-samples by wavelength-dispersive X-ray spectroscopy (WDX) reveal sample dependent discrepancies to the nominal fluorine content (initial weight). In particular for SmO1−xFxFeAs, the measured value only reached approximately half of the required value. In the lanthanum compound LaO1−xFxFeAs, we found a good agreement mainly for x>0.05, but the fluorine hardly goes into the sample for x<0.05. We used the measured fluorine content when plotting the electronic phase diagrams again and find a more consistent picture occurs as well for our samples as for comparison with the divers published data.

This work was focused on studies of the metal hydride materials having a potential in building hydrogen storage systems with high gravimetric and volumetric efficiencies of H storage and formed / decomposed with high rates of hydrogen exchange. In situ diffraction studies of the metal-hydrogen systems were explored as a valuable tool in probing both the mechanism of the phase-structural transformations and their kinetics. Two complementary techniques, namely Neutron Powder Diffraction (NPD) and Synchrotron X-ray diffraction (SR XRD) were utilised. High pressure in situ NPD studies were performed at D2 pressures reaching 1000 bar at the D1B diffractometer accommodated at Institute Laue Langevin, Grenoble. The data of the time resolved in situ SR XRD were collected at the Swiss Norwegian Beam Lines, ESRF, Grenoble in the pressure range up to 50 bar H2 at temperatures 20-400°C.

The systems studied by NPD at high pressures included deuterated Al-modified Laves-type C15 ZrFe2-xAlx intermetallics with x = 0.02; 0.04 and 0.20 and the CeNi5-D2 system. D content, hysteresis of H uptake and release, unit cell expansion and stability of the hydrides systematically change with Al content.

Deuteration exhibited a very fast kinetics; it resulted in increase of the unit cells volumes reaching 23.5 % for ZrFe1.98Al0.02D2.9(1) and associated with exclusive occupancy of the Zr2(Fe,Al)2 tetrahedra.

For CeNi5 deuteration yielded a hexahydride CeNi5D6.2 (20°C, 776 bar D2) and was accompanied by a nearly isotropic volume expansion reaching 30.1% (∆a/a=10.0%; ∆c/c=7.5%). Deuterium atoms fill three different interstitial sites including Ce2Ni2, Ce2Ni3 and Ni4. Significant hysteresis was observed on the first absorption-desorption cycle. This hysteresis decreased on the absorption-desorption cycling.

A different approach to the development of H storage systems is based on the hydrides of light elements, first of all the Mg-based ones. These systems were studied by SR XRD. Reactive ball milling in hydrogen (HRBM) allowed synthesis of the nanostructured Mg-based hydrides.

The experimental parameters (PH2, T, energy of milling, ball / sample ratio and balls size), significantly influence rate of hydrogenation. The studies confirmed (a) a completeness of hydrogenation of Mg into MgH2; (b) indicated a partial transformation of the originally formed -MgH2 into a metastable -MgH2 (a ratio / was 3/1); (c) yielded the crystallite size for the main hydrogenation product, -MgH2, as close to 10 nm. Influence of the additives to Mg on the structure and hydrogen absorption/desorption properties and cycle behaviour of the composites was established and will be discussed in the paper.

Dynamic Interactive Systems are defined by networks of continuously exchanging and reversibly reorganizing connected objects (supermolecules, polymers, biomolecules, pores, nanoplatforms, surfaces, liposomes, cells). They are operating under the natural selection to allow spatial / temporal and structural / functional adaptability in response to internal constitutionalor to stimulant external factors. In this minireview we will disscuss some selected examples of organic/inorganic SYSTEMS MATERIALS, covering a) the sol-gel resolution of constitutional architectures from Dynamic combinatorial libraries and b) the generation of Dynamic Hybrid Materials and SYSTEMS MEMBRANES able to evolve insidepore architectures via ionic stimuli so as to improve membrane transport functions.

This work deals with rotating bending fatigue tests on aluminum alloy 6061-T6, under loading condition close to the elastic limit of the material. Results have been obtained for three types of specimens: without artificial pitting, specimens with one artificial pitting hole and specimens with two neighboring artificial pitting holes. Results show that fatigue endurance is reduced in the case of one pitting hole and considerably for two neighboring pitting holes. In order to explain this behavior, numerical analysis by FE are carried out to determine the stress concentrations for the three types of specimens. It is found that the stress concentration for two neighboring pitting holes is an exponential function of the separation between the two holes, under uniaxial loading. The probability to find two or more neighboring pitting holes in real industrial materials, such as cast iron, corroded or pitting metallic alloys is high; then, the stress concentration for two or more neighboring pitting holes needs to be considered for the fatigue prediction life under fatigue loading and corrosion attack applications.

Properties such as semicondutor film grain size, morphology, and channel length are known to effect the sensing response in pentacene based organic thin film transistors (OTFTs). The sensing behavior for low and high mobility pentacene devices are reported here exhibiting different temperature dependent behaviors. The lower mobility OTFT exhibits an expected thermally activated response during alcohol testing with an increasing mobility with temperature along with a decreasing mobility at each temperature for increasing concentration. The higher mobility device exhibits a decrease in mobility with increasing temperature along with a decrease in mobility with increasing concentration at each temperature. In both sets of devices, the polar analyte produced reductions in drain current and shifts in threshold voltage.

Hydrogenated amorphous silicon (a-Si:H) thin films were deposited on pre-oxidized Si wafers by electron cyclotron resonance chemical vapor deposition (ECRCVD). The rapid thermal annealing (RTA) treatments were applied to the as-grown samples in nitrogen atmosphere, and the temperature range for the RTA process is from 450 to 950 °C. The crystallization and grain growth behaviors of the annealed films were investigated by Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The onset temperature for the crystallization and grain growth is around 625 ∼ 650°C. The crystalline fraction of annealed a-Si:H films can reach ∼80%, and a grain size up to 17 nm could be obtained from the RTA treatment at 700 °C. We found that the crystallization continues when the grain growth has stopped.

The use of nanotechnology based materials for chemical sensing has been of great interest since nanocrystalline materials have been shown to offer improved sensor sensitivity, stability, and response time. Several groups are successfully integrating nanostructures such as nanowires into operational sensors. The typical procedure may include random placement (e.g., dispersion, with fine-line patterning techniques used to create functional sensors) or time consuming precise fabrication (e.g., mechanical placement using an atomic force microscope or laser tweezer techniques). Dielectrophoresis has also been utilized, however it can be challenging to achieve good electrical contact of the nanostructures to the underlying electrodes. In this paper we report on a sensor platform that incorporates nanorods in a controlled, efficient, and effective manner. Semiconducting SnO2 nanorods are used as the sensing element for detection of hydrogen (H2) and propylene (C3H6) up to 600oC. Using a novel approach of combining dielectrophoresis with standard microfabrication processing techniques, we have achieved reproducible, time-efficient fabrication of gas sensors with reliable contacts to the SnO2 nanorods used for the detection of gases. The sensor layout is designed to assist in the alignment of the nanorods by selectively enhancing the electric field strength and allowing for the quick production of sensor arrays. The SnO2 nanorods are produced using a thermal evaporation-condensation approach. After growth, nanorods are separated from the resulting material using gravimetric separation. The rods vary in length from 3μm to greater than 10μm, with diameters ranging from 50 to 300nm. Dielectrophoresis is used to align multiple nanorods between electrodes. A second layer of metal is incorporated using standard microfabrication methods immediately after alignment to bury the ends of the rods making contact with the underlying electrodes within another layer of metal. Electrical contact was verified during testing by the response to H2 and C3H6 gases at a range of temperatures. Testing was performed on a stage with temperature control and probes were used for electrical contact. Gas flows into the testing chamber at a flow rate of 4000sccm. Sensor response of normalized current shift, |Igas-Iair|/Iair, was measured at a constant voltage bias. Sensors showed response to both H2 and C3H6. Detection of H2 was achieved at 100oC and response levels improved approximately 12000-fold at 600oC. Detection of C3H6 started at 100oC and improved approximately 10000-fold at 600oC. Detection of at least 200ppm for both gases was achieved at 600oC. Using this novel microfabrication approach, semiconducting SnO2 nanorods integrated into a microsensor platform have been demonstrated and sensing response showed dramatic increases at higher temperatures.

This paper presents results on the impact of Laser CO2 process variables on the weldability, phase transformations and tensile properties of a TRIP800 Steel. The microstructure of this steel is comprised of ferrite, bainite and retained austenite phases. This is obtained by controlled cooling from the intercritical annealing temperature to the isothermal bainitic holding temperature. These steels have been increasingly used in the last 10 years in the automotive industry and for these materials to be used effectively; the influence of material and the CO2 laser welding process condition must be clearly understood. Hence, in this work the effect of the welding process on the resultant microstructures and on the exhibited mechanical properties is investigated. It is found that the tensile strength of welded specimens falls below 800 MPa and that the elongation becomes 15 % or lower. In turn, this clearly indicates that the implemented laser welding process leads to a reduction in the TRIP800 steel toughness.

In this work, we examine the influence of hafnium and zirconium oxides ALD precursor chemistry on the memory properties of SiO2/Si3N4/ZrO2 and SiO2/Si3N4/HfO2 non-volatile gate memory stacks. Approximately 10 nm thick ZrO2 and HfO2 layers were deposited on top of a SiO2/Si3N4 structure, functioning as blocking oxides. Both metal oxides were deposited using either alkylamides or cyclopentadienyls as metal precursors, and ozone as the oxygen source. In the case of the ZrO2 gate stacks a memory window of 6 V was determined, comprised of 4 V write window and 2 V erase window. Although no dramatic differences were evident between the ZrO2 layers, ZrO2 grown from alkylamide provided structures with higher dielectric strength. The memory structures with HfO2 blocking layers indicate that the memory window and the dielectric strength are significantly affected by the precursor. The structures with the HfO2 formed from alkylamide showed a write window of 7 V, while the films grown from cyclopentadienyl possessed window of 5 V. Comparison between the memory windows obtained using ZrO2 and HfO2 as control oxides reveals that the former provides memory structures with higher electron trapping efficiency.

The trend for future integrated circuits (IC) is decreasing in size beyond the conventional limits. The recent transition from aluminum to copper as the interconnect material for IC is due to copper's higher resistance to electromigration and its lower resistivity. Unfortunately, copper has high mobility in Si and SiO2 and may cause destruction of electrical connections on the chip. Hence, there is a significant necessity in finding ultra thin, thermally stable, high quality and good adhered diffusion barriers. The most widely used barrier is pure Ta films or layer stacks consisting of Ta and TaN. These have excellent conformality, very good uniformity and high thermal stability. But The continuous scaling down of the interconnect dimensions lead to an essential decrease in the barrier layer effective thickness to less than 5nm; coupled with the replacement of silicon oxide by advanced low-k dielectrics it demand further improvements of the diffusion barrier performance. For that reason Self-assembled monolayers (SAMs), with thicknesses of 2nm or less, have been propose for copper diffusion barrier application. By tailoring the structure of these monomolecular organic films, atomic scale properties can be controlled and selective surfaces and interfaces can be engine as desired for a specific application. In the presented work, the quality of an amino-terminated SAM barrier (NH2SAM) is tested. A high density and the absence of pinholes in the barrier layer are essential for a good barrier performance. First, the macroscopic quality of the NH2SAM barrier has been characterized by Water contact angle (CA) and High resolution AFM (HR-AFM). Secondly, the density and the presence and/or absence of pinholes have been tested by Ellipsometry and Cylic Voltametry (CV). Finally, the intrinsic barrier performance in form of Time- dependent dielectric breakdown (TDDB) lifetime has been extracted from planar capacitor structures that permitted to measure the leakage/Cu diffusion through barrier in the vertical direction. The Contact angle of layers formed at different deposition times show a variation of the hydrophilic SiO2 substrate to hydrophobic already with 1min deposited NH2SAM layer. A 15min deposited NH2SAM (~1nm), results in a continuous and pinhole free layer observed by HR-AFM. The refraction index (η) calculated by ellipsometry, indicates an increase in the density of the layer with the deposition time. On the other hand, cyclic voltametry shows inhibition of the electrochemical reduction of Fe3+ specimen to Fe2+ when NH2SAM are formed on ~2nmSiO2/Si electrodes. A decrease in the capacitive current is observed by increasing the layer thickness and density. The intrinsic barrier performance of the NH2SAM barrier by TDDB is demonstrated with an increase of 10 times the capacitor lifetime by comparing with no barrier system.

Solid Phase Epitaxial Regrowth (SPER) is of great technological importance in semiconductor device fabrication. A better understanding and accurately modeling of its behavior are vital to the design of fabrication processes and the improvement of the device performance. In this paper, SPER was modeled by Molecular Dynamics (MD) with Tersoff potential. Extensive MD simulations were conducted to study the dependence of SPER rate on growth orientation and uniaxial stress. The results were compared with experimental data. It was concluded that MD with Tersoff potential can qualitively describe the SPER process. For a more quantitatively accurate model, a better interatomic potential are needed.

Metal/high-k dielectric core shell nanocrystal memory capacitor was demonstrated. This kind of MOS memory shows good performance in charge storage capacity, programming and erasing speed. By using a self-assembled Block Co-Polymer, Co/HfO2 core shell nanocrystals were well arrayed and showed uniform dot size and inter distance between dots. Compared with traditional metal nanocrystal fabrication process with E-Beam Evaporation followed by RTA (Rapid Thermal Annealing), core shell nanocrystal memory prepared by Block Co-Polymer produces a wide memory window of 8.4V at the ±12 V voltage sweep. Co/HfO2 core shell nanocrystals prepared by low-temperature Block Co-polymer process ensure high reliability of the devices.

Copper phthalocyanine (CuPc) belongs to a class of small molecules offering particularly interesting advantages when employed in organic electronic devices. Because of its advantageous attributes like high thermal stability, inertness when exposed to acids or alkalis, relatively high electron conductivity, color and light fastness it has been employed in polymer photovoltaic devices as a unipolar dopants complementing the buckminsterfullerene (C60) acceptors and as a conductive buffer. Other organic applications include ambipolar OFETs and non-linear optics structures. X-ray photoelectron spectroscopy (XPS) has been commonly employed to monitor the quality of thin CuPc films. Although XPS analyses of CuPc have been done for over forty years there has not yet been agreement regarding interpretation of the major C1s signal, particularly in the case of non-stoichometric CuPc composition. This work presents systematic studies of the C1s signal of thin film deposits, fabricated using commercially available CuPc materials. It was found that composite C1s CuPc signal consists of five components: two related to the principal C positions within the CuPc macrocycle (C-C in 6-membered ring, C-C-N in 5-membered ring), two associated with shake-up transitions accompanying principal C transitions, and one due to mostly aliphatic impurities. Detailed analysis showed that the magnitude of shake-up peaks was approximately equal 10% to 12% of their principal transitions, in agreement with the theoretical calculations. Correspondingly, the C1s signal originating from the non-CuPc impurities quantitatively agreed with the IR attenuated total reflectance (ATR-IR) measurement of the C-H aliphatic vibrations originating from these impurities present within the CuPc layer. The proposed C1s interpretation has been successfully tested for a large number of commercial CuPc materials and provides a guideline for a routine XPS analysis of the CuPc in organic photovoltaic devices.

This work reports the first results of a new generation plasma-enhanced chemical vapor deposition (PECVD) reactor manufactured by Roth and Rau. This large area parallel plate reactor has been especially designed for the manufacturing of silicon heterojunction solar cells which are made of very thin amorphous silicon films over monocrystalline silicon substrates. Layer thickness uniformity below ± 3 % is reported for both intrinsic and doped layer over a 400 × 400 mm2 area. Moreover, it is shown that the passivation quality is excellent with life-times up to 4.15 ms on n-type FZ silicon substrates. A ± 0.6 % uniformity in open circuit voltage (mean value of 701.4 mV) is achieved over 32 devices having a 4 cm2 area and an average conversion efficiency of 19.5 %.

The Fracture-Matrix Transport (FMT) code developed at Sandia National Laboratories solves chemical equilibrium problems using the Pitzer activity coefficient model with a database containing actinide species. The code is capable of predicting actinide solubilities at 25 °C in various ionic-strength solutions from dilute groundwaters to high-ionic-strength brines. The code uses oxidation state analogies, i.e., Am(III) is used to predict solubilities of actinides in the +III oxidation state; Th(IV) is used to predict solubilities of actinides in the +IV state; Np(V) is utilized to predict solubilities of actinides in the +V state. This code has been qualified for predicting actinide solubilities for the Waste Isolation Pilot Plant (WIPP) Compliance Certification Application in 1996, and Compliance Re-Certification Applications in 2004 and 2009.

We have established revised actinide-solubility uncertainty ranges and probability distributions for Performance Assessment (PA) by comparing actinide solubilities predicted by the FMT code with solubility data in various solutions from the open literature. The literature data used in this study include solubilities in simple solutions (NaCl, NaHCO3, Na2CO3, NaClO4, KCl, K2CO3, etc.), binary mixing solutions (NaCl+NaHCO3, NaCl+Na2CO3, KCl+K2CO3, etc.), ternary mixing solutions (NaCl+Na2CO3+KCl, NaHCO3+Na2CO3+NaClO4, etc.), and multi-component synthetic brines relevant to the WIPP.

High-density TiO2-CdS and ZnO-CdS core-shell nanocable arrays were synthesized on large-area Ti substrates. The CdS layers were deposited on the pre-grown vertically-aligned TiO2 (rutile) and ZnO nanowire arrays, with a controlled thickness (10~50 nm), using the vapor transport method. The ZnO-CdS nanocables consisted of single-crystalline wurtzite CdS shells whose [001] direction was aligned along the [001] wire axis of the wurtzite ZnO core, which is distinctive from the polycrystalline shell of the TiO2-CdS nanocables. We fabricated the photoelectrochemical cell using the ZnO-CdS photoelectrode exhibits much more efficient hydrogen generation than that using the TiO2-CdS one.

We employed passive particle-tracking microrheology to map the micromechanical structure of the hyaluronan-rich pericellular coat enveloping chondrocytes. Therefor we exploited the technique's position sensitivity to gain radial information on the coat. We observed a linear increase in viscoelasticity from the coat's rim towards the cell membrane. This gradient corresponds to hyaluronan concentration profiles observed in confocal fluorescent microscopy with small, specific hyaluronan markers. These results suggest that the structural basis of the pericellular coat is formed by grafted hyaluronan of different effective lengths stretched out by a homogenous decoration with hyaladherins such as aggrecan. The different effective lengths could be caused either by different lengths of the HA chains or by “side-on” attachments within the chain. Remarkably, the hyaluronan-rich coat increases the viscosity of the pericellular space only by about a factor of about two at 100 and at 20 Hz compared to pure media and an increasing elastic component is observed. Both the viscoelasticity as well as the hyaluronan concentration decrease linearly or slightly exponential from the cell membrane towards the PCC's rim. These observations could be obtained on living cells exploiting this unintrusive measurement techniques.

Perfluorosulfonic acid membrane (Nafion®-117) was first surface modified with atmospheric pressure UV photo-oxidation or low-pressure vacuum UV photo-oxidation downstream from an Ar microwave plasma, and then graft polymerized with acrylic acid. X-ray photoelectron spectroscopy (XPS) was used to analyze the modified Nafion surface and poly(acrylic acid) grafted to the modified surface.