A combination of silver and gold is demonstrated in nanoscale objects. Silver and gold have similar but distinct chemical and physical properties. We employed three main chemistry related to silver and gold – underpotential deposition, epitaxial growth, and Galvanic replacement. Selective underpotential deposition of silver guided the growth direction of gold and generated gold octahedrons, cuboctahedrons, cubes, and rods. Epitaxial growth of silver on gold decahedral seeds formed silver-gold-silver heterometallic nanorods and wires. Galvanic replacement of silver for gold yielded asymmetric single hollow and symmetric double hollow structures. All silver/gold nanostructures exhibited characteristic optical features in the UV-vis-NIR ranges. Such structural variation and corresponding optical properties are useful for diverse applications in electronics, photonics, biology, and catalysis.

High efficiency photovoltaic devices are normally fabricated on single crystalline substrates. These single crystalline substrates are expensive and volume production for widespread usage has not been realistic. To date, large volume production of solar cells is on less expensive non-crystalline substrates such as glass. Typically the films grown on glass are polycrystalline with less than ideal efficiency. It was proposed that a dramatic gain in the efficiency may be achieved if one uses a biaxially oriented buffer layer on glass to grow biaxial semiconductor films to fabricate solar devices compared to that of films grown directly on glass. Biaxial films are not exactly single crystal but have strongly preferred crystallographic orientations in both the out-of-plane and in-plane directions. Typically the misorientation between grains can be small (within a few degrees) and may possess low carrier recombination rate. In this paper we shall discuss growth techniques that would allow one to produce biaxial buffer layers on glass. A specific strategy using an atomic shadowing mechanism in an oblique angle deposition configuration that allows one to grow biaxial buffer layers such as CaF2 on glass substrate will be discussed in detail. Results of heteroepitaxy of semiconductor materials such as CdTe and Ge on these biaxial buffer/glass substrates characterized by x-ray pole figure, reflection high energy electron diffraction (RHEED) pole figure and transmission electron microscopy (TEM) will be presented.

Thin crystals of La2O3, La2/3TiO3, La2TiO5, and La2Ti2O7 have been irradiated in situ using 1 MeV Kr2+ ions in the Intermediate Voltage Electron Microscope-Tandem User Facility (IVEM-Tandem), at the Argonne National Laboratory (ANL). We observed that La2O3 remained crystalline to a fluence greater than 3.1 × 1016 ions cm-2 at a temperature of 50 K. The four binary oxide compounds in the two systems were observed through the crystalline-amorphous transition as a function of ion fluence and temperature. Results from the ion irradiations give critical temperatures for amorphisation (Tc) of 840 K for La2Ti2O7, 865 K for La2/3TiO3, and 1027 K for La2TiO5. The Tc values observed in this study, together with previous data for TiO2, are discussed with reference to the phase diagrams for La2O3-TiO2 systems and the different local environments within the crystal structures. Results suggest an observable inverse correlation between Tc and melting temperature (Tm) in the two systems.

Microstructural evolution is directly observed when the cross-sectional film specimen of Si/SiGe/Si on insulator (Si/SiGe/SOI) is heated from room temperature (R.T., 291 K) up to 1113 K in high voltage transmission electron microscope (HVEM). The misfit dislocation at the lower interface of the SiGe layer begins to extend downwards even at 913 K. The lower interface takes the lead in roughening against the upper interface of the SiGe layer. The roughened interface is ascribed to elastic relaxation. As misfit strain is partially transferred to SOI top Si layer and misfit dislocation is prolonged at the lower interface, the roughened interface turns smooth again. Thereafter, the misfit dislocations are introduced into the upper roughened interface of the SiGe layer to release the increased misfit strain. It is suggested that the microscopic relaxation of the SiGe layer is related to dislocation behavior and strain transfer.

The influence of Si-doping on the growth and material characteristics of InAs nanowires deposited by metal-organic vapor phase epitaxy (MOVPE) was investigated. It was observed that above a certain partial pressure ratio, doping has an influence on the morphology. The nanowires exhibit better uniformity but lower height vs. diameter aspect ratio as the supply of the dopant increases. It was consistantly found that the specific conductance of the nanowires also increases. Moreover the electrical measurements showed a transition from semiconducting to metallic behavior in the case of highly doped nanowires.

We develop experimentally and theoretically plasmonic and photonic crystals for enhancing thin film silicon solar cells. Thin film amorphous silicon (a-Si:H) solar cells suffer from decreased absorption of red and near-infrared photons, where the photon absorption length is large. Simulations predict maximal light absorption for a pitch of 700-800 nm for photonic crystal hole arrays in silver or ZnO/Ag back reflectors, with absorption increases of ~12%. The photonic crystal improves over the ideal randomly roughened back reflector (or the ‘4n2 limit’) at wavelengths near the band edge. We fabricated metallic photonic crystal back-reflectors using photolithography and reactive-ion etching. We conformally deposited a-Si:H solar cells on triangular lattice hole arrays of pitch 760 nm on silver back-reflectors. Electron microscopy demonstrates excellent long range periodicity and conformal a-Si:H growth. The measured quantum efficiency increases by 7-8 %, relative to a flat reflector reference device, with enhancement factors exceeding 6 at near-infrared wavelengths. The photonic crystal back reflector strongly diffracts light and increases optical path lengths of solar photons.

We propose a hydrogen assisted reactive ion etching method for generating nano-grass and nano-texturing of silicon substrates in desirable shapes and locations. The etching technique is based on sequential etching and passivation steps where a combination of three gases of H2, O2 and SF6 in the presence of RF plasma is exploited. Using this method it has been possible to realize high aspect ratio features on silicon substrates whereas by adjusting the etching parameters, it is possible to form texturing of silicon in desired places. This technique is highly programmable where the pressure, gas flows, plasma power and duration of each cycle can be preset to achieve desired features. The formation of nano-grass on the silicon surface improves its wetability both to water and oil spills.

Using vinyl-silsesquioxane modified with various amounts of tetraethoxysilane (TEOS) and titanium tetrabutoxide (TTB), two kinds of hybrid films, film-vinyl-silsesquioxane-TEOS (f-VSTE) and film-vinyl-silsesquioxane-TTB (f-VSTT), were prepared. The average transparency (AT) of the modified films was measured in the ranges of the visible light region (400–750 nm) and in the near-infrared region (750–2500 nm). The AT values in these ranges are about 88% to 94%, indicating that these high-AT films can provide crops with growth energy and improvement of the photosynthetic process efficiency. The TEOS additions result in a hybrid structure (containing SiO2); an adequate addition can cause an increase in the AT radiation from sunlight. On the other hand, the TTB additions result in a hybrid structure (containing TiO2) that causes a decrease in the AT. These results were validated using molecular dynamic simulation and were calculated (with Materials Stutio software) using the density of states and the energy-band structure of the vinyl-SSO, SiO2, and TiO2 building blocks.

Since the discovery of stable graphene sheets by Novoselov und Geim in 2004 the one atom thick carbon material has been attracted great interest because of its outstanding physical, mechanical and chemical properties. Although there had been intensive research to find new ways in the preparation of single-layer graphene sheets in the last few years, especially the large-scale production of graphene still remains challenging. In this paper we present a new approach, which allows the high-yield production of graphene sheets in a simple stirred media milling process. Under mild milling conditions single- and multilayer graphene sheets have been successfully produced from commercial graphite powder in a liquid medium. During the delamination procedure, the graphite particles were stressed between the milling beads. Shear and compressive normal forces can lead under mild milling conditions, i.e. low stress energies, to a continuous mechanical peeling of graphene sheets from the graphite surface. By means of Atomic Force Microscopy a high yield of single- and multilayer graphene sheets was detected. A concentration of exfoliated sheets of 2 wt% starting from a 5 wt% suspension of coarse graphite particles could be determined after a milling time of only 3 h. This concentration is much higher than those, which were reached by most of the known chemical methods. Since stirred media milling can be realized as large-scale process, a high-yield and low-cost production of graphene flakes becomes possible at ambient temperature.

We demonstrate that deposition patterns formed during drying droplets of aqueous protein solutions are complex, characteristic, and highly reproducible. Substrate, buffer as well as protein type are important factors largely influencing the patterned structure. Specifically, multiple growth zones in what we refer to as “soccer ball pattern” are formed when a droplet of albumin solution in sodium bicarbonate buffer is dried. Each growth zone has periodically patterned, concentric ringed structures surrounding a core at the center. Different macroscopic patterns are also found for streptavidin, fibrinogen, IgG antibody as well as rhodamine B base and polystyrene beads when droplets of their aqueous solutions are dried on the substrates with different degrees of hydrophilicity/hydrophobicity. Furthermore, distinguishable deposition patterns are formed in drying droplets of aqueous protein solutions containing albumin and fibrinogen at different ratios, suggesting that even the relative abundance of multiple proteins influences the deposition patterns. Since the protein pattern is reproducible for a given protein and variable among different proteins, the protein patterns from drying droplets might be useful to potentially identify a given protein under specific conditions.

A regular hexagonally packed biomimetic moth-eye antireflective surface acts as a diffraction grating at short wavelengths of the visible spectrum and shallow angles of incidence. These gratings display strong backscattered iridescence with 6-fold optical symmetry. The optical symmetry of real moth eyes is effectively infinite as nature utilizes large number of uniquely orientated domains. In this work we report on a biomimetic moth-eye surface created via nanosphere lithography with a very large distribution of close-packed tessellated domains and the resulting optical symmetry is compared to that of another widely known highly isotropic diffraction grating, also inspired by nature, the sunflower pattern. A white-light laser reflectometry system is used to measure and compare the diffraction pattern isotropy from both structures. The tessellated close-packed structure diffraction pattern approaches that of infinite optical symmetry even though the underlying pattern only possesses a six-fold symmetry. Hence, the angular isotropy observed for the sunflower pattern is replicated to a large extent via a self-assembly procedure, whilst circumventing the complicated design and manufacturing requirements of the sunflower pattern.

Amorphous hydrogenated Si1-xCx/SiC multilayers consisting of alternating Si1-xCx and stoichiometric SiC layers were prepared using Plasma Enhanced Chemical Vapour Deposition (PECVD). Annealing at temperatures up to 1100°C was done targeting the size controlled crystallization of Si nanocrystals (NCs) in a SiC matrix. The influence of annealing temperature on the nanostructure of the multilayers was studied using Glancing Incidence X-ray Diffraction (GIXRD), Raman spectroscopy and Transmission Electron Microscopy (TEM). GIXRD reveal the crystallization of Si and SiC, when annealing temperatures exceed 900°C. The crystallization of Si and SiC was confirmed by TEM bright-field imaging and electron diffraction. Annealing at 900°C, leads to the formation of Si NCs with a size of 3 nm, whereas the SiC NCs also have a size of 3 nm. However, a large amount of Si is still amorphous as shown by Raman spectroscopy. Annealing at temperatures exceeding 900°C reduces the amorphous phase and a further growth of Si NCs occurs.

In this work, we have studied the possibility to use a microwire of BiSn to design an anisotropic thermoelectric generator. The glass-coated microwire of pure and Sn-doped bismuth was obtained by the Ulitovsky method; it was a cylindrical single-crystal with orientation (1011) along the wire axis; the C3 axis was deflected at an angle of 70° to the microwire axis. It is found that doping of bismuth wires with tin increases the thermopower anisotropy in comparison with Bi by a factor of 2 – 3 in the temperature range of 200 – 300 K. According to the preliminary results, for a Bi microwire with a diameter of 10 μm with a glass coating of 35 μm, the transverse thermopower is ∼ 150 μV/(K*cm); for BiSn, 300 μV/(K*cm).The design of an anisotropic thermogenerator based on BiSn microwire is proposed. The miniature thermogenerator will be efficient for power supply of devices with low useful current.

In addition to the considerable thermopower anisotropy of BiSn wires in a glass coating, they exhibit stable thermoelectric properties, high mechanical strength and flexibility, which allows designing thermoelectric devices of various configurations on their basis.

Nanocrystalline bulk silicon samples were fabricated using silicon nanoparticles from the gas phase, applying a spark-plasma sintering process. The mean diameter of the crystalline grains after sintering was 30 nm and smaller, the density above 97 % of that of crystalline silicon. Transmission electron microscopy showed a homogenous nanostructure. The thermal conductivity of such an n-type sample with a nominal doping level of 5×1020 cm-3 was around 11 Wm-1K-1 at room temperature. With Seebeck-coefficient α = -150 μV/K and specific conductivity σ = 290 S cm-1, the resulting efficiency ZT is approximately 0.02.

In this paper, fabrication of nanocomposite thin films with introduction of fullerene (C60) molecules in PolyMethyl MethAcrylate resist (PMMA) was investigated from a material and electrical point of view. The effective inclusion of C60 molecules in the samples was characterized by using UV-vis and Tof-SIMS instruments. The modified resist PMMA:C60 was also studied with Thermal analysis (TGA, DSC) where modification of physical properties is reported. Films were included in MIS and MIM devices and results on non volatile trapping of C60 doped PMMA are presented. Moreover, e-beam exposure tests showed that PMMA:C60 active layers for memory devices, were scalable in size.

The important developments in new nuclear fuels are reviewed and compared with the status of present light-water reactor fuels. The limitations of LWR fuels are reviewed with respect to important recent concerns, namely provision of outlet coolant temperatures high enough for use in H2 production, destruction of plutonium to eliminate proliferation concerns, and burning of the minor actinides to reduce the waste repository heat load and long-term radiation hazard. In addition to current oxide-based fuel-rod designs, the hydride fuel with liquid metal thermal bonding of the fuel-cladding gap is covered. Finally, two of the most promising Generation IV reactor concepts, the Very High Temperature Reactor(VHTR) and the Sodium Fast Reactor (SFR) , and the accompanying reprocessing technologies, aqueous-based UREX+1a for the VHTR and pyrometallurgical for the SFR, are summarized.

This paper analyzes the fracture behavior and mechanisms of stress corrosion cracking (SCC) of API X52 pipeline steel. Susceptibility and mechanism of SCC was investigated using slow strain rate tests (SSRT) performed at strain rate of 1 × 10−6 in/sec in a glass autoclave containing a soil solution with pH of 8.5 at room temperature. Cathodic polarization potentials of −100, −200 and −400 mV referred to Ecorr was applied in order to establish the effectiveness of cathodic protection in mitigating SCC of X52 pipeline steel. To study the effects of several over potential in SSRT were performed at different cathodic potentials. The results of reduction area ratio (RAR), time to failure ratio (TFR) and plastic elongation ratio (PER) indicate that X52 pipeline steel was susceptible to SCC. Scanning electron microscopy (SEM) observations of these specimens showed a brittle type of fracture with transgranular appearance. The failure and SCC mechanism of X52 steel in the soil solution was hydrogen based mechanism. This mechanism was confirmed through the internal cracks observed in these specimens. All cracking tests indicated that the SCC rate was enhanced by plastic deformation.

SiGe nanowires were grown by the vapor-liquid-solid method using a low pressure chemical vapor deposition reactor and different flows of the GeH4 and Si2H6 gas precursors. The morphology of the nanowires was studied by field emission scanning electron microscopy, and the length, diameter and density of nanowires were determined. Their structure and crystallinity were analyzed by transmission electron microscopy and its related techniques. Energy dispersive X-ray emission of individual nanowires as well a Raman spectroscopy were used to determine their composition and to analyze its homogeneity.

In this work, we report on the evaporative deposition of bacteria from a drying aqueous drop on mica as a function of the bacterial suspension age. For sufficiently aged bacterial suspensions, residues are small and more filled-in than residues formed from fresh suspensions on similarly aged mica. In addition, the interior deposition pattern transitions from a cellular film characteristic of fresh suspensions to a cracked carpet pattern for aged suspensions. Suspension aging related changes in the residues are attributed to accumulation of organic materials such as DNA, RNA, proteins, and other bacterial components in the suspension. The aging process is also observed to be at least partially dependent on ventilation of the suspension during aging.

Micro-texture dependence of both the mechanical and electrical properties of electroplated copper thin films was discussed experimentally considering the change of their micro texture caused by thermal history after the electroplating. Both the static and fatigue strength of the films changed drastically depending on the micro texture and it was found that there were two fatigue fracture modes in the films. One was a typical ductile intragranular fracture and the other was brittle intergranular one. The reason for the variation of the strength of the electroplated copper thin films was attributed to the variation of the average grain size and the characteristics of grain boundaries. In addition, the electrical reliability of the electroplated copper interconnections was discussed under electromigration tests. Though abrupt fracture mode due to the local fusion appeared in the as-electroplated films, the life of the interconnections was improved significantly after the annealing at temperatures high than 200°C. Typical change of the surface morphology of the film, i.e., the formation of voids and hillocks were observed on their surfaces after the annealing. This was also caused by the change of the micro texture from fine grains with porous grain boundaries to coarsened columnar grains with rigid grain boundaries. However, the stress-induced migration appeared in the annealed narrow interconnections, in particular. This was because of high tensile residual stress occurred in the film due to the constraint of the shrinkage of the films by rigid oxide around them. These results clearly indicated that the control of both the micro-texture and residual stress is indispensable for improving the reliability of the interconnectins.