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    This article has been cited by the following publications. This list is generated based on data provided by CrossRef.

    Black, J. P. Breward, C. J. W. and Howell, P. D. 2015. Two-Dimensional Modeling of Electron Flow Through a Poorly Conducting Layer. SIAM Journal on Applied Mathematics, Vol. 75, Issue. 2, p. 289.


    Dreher, Michael and Schnur, Johannes 2015. The combined viscous semi-classical limit for a quantum hydrodynamic system with barrier potential. Journal of Mathematical Analysis and Applications, Vol. 425, Issue. 2, p. 1113.


    Bian, Shen Chen, Li and Dreher, Michael 2012. Boundary layer analysis in the semiclassical limit of a quantum drift–diffusion model. Journal of Differential Equations, Vol. 253, Issue. 1, p. 356.


    Liu, Yao Zhang, Ming Chen, Li and Yu, Zhiping 2011. Analytical solution to the density-gradient equation for MOS quantum tunneling. Tsinghua Science and Technology, Vol. 16, Issue. 2, p. 181.


    Uno, Shigeyasu Abebe, Henok and Cumberbatch, Ellis 2007. Analytical Description of Inversion-Layer Quantum Effects Using the Density Gradient Model and Singular Perturbation Theory. Japanese Journal of Applied Physics, Vol. 46, Issue. 12, p. 7648.


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  • European Journal of Applied Mathematics, Volume 17, Issue 4
  • August 2006, pp. 465-489

Nano-scale MOSFET device modelling with quantum mechanical effects

  • ELLIS CUMBERBATCH (a1), SHIGEYASU UNO (a1) and HENOK ABEBE (a2)
  • DOI: http://dx.doi.org/10.1017/S0956792506006656
  • Published online: 01 November 2006
Abstract

The continuing down-scaling trend of CMOS technology has brought serious deterioration in the accuracy of the SPICE (Simulation Program with Integrated Circuit Emphasis) device models used in the design of chip functions. This is due to in part to hot electron and quantum effects that occur in modern nano-scale MOSFET devices [13, 25, 28, 33, 34]. The focus of this paper is on modeling quantum confinement effects based on the Density-Gradient (DG) model [6, 9, 14], for application in SPICE. Analytic 1-D quantum mechanical (QM) effects correction formulae for the MOSFET inversion charge and electrostatic potential are derived from the DG model using matched asymptotic expansion techniques. Comparison of these new models with numerical data shows good results.

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European Journal of Applied Mathematics
  • ISSN: 0956-7925
  • EISSN: 1469-4425
  • URL: /core/journals/european-journal-of-applied-mathematics
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