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    This article has been cited by the following publications. This list is generated based on data provided by CrossRef.

    Shurenkov, V. V. 2015. The Induced Physical Effects on the Semiconductor Electronics under Electromagnetic Pulse. International Journal of Electrical Energy, Vol. 3, Issue. 4,

    Alaeddine, A. Genevois, C. Chevalier, L. and Daoud, K. 2012. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. p. 1.

    Alaeddine, A. Kadi, M. and Daoud, K. 2011. 2011 International Reliability Physics Symposium. p. CD.1.1.

    Alaeddine, Ali Genevois, Cécile Chevalier, Laurence and Daoud, Kaouther 2011. STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs. Nanoscale Research Letters, Vol. 6, Issue. 1, p. 574.

    Alaeddine, A Genevois, C Kadi, M Cuvilly, F and Daoud, K 2011. Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress. Semiconductor Science and Technology, Vol. 26, Issue. 2, p. 025003.

    Alaeddine, A. Kadi, M. Daoud, K. and Beydoun, B. 2010. Characteristics degradation of the SiGe HBT under electromagnetic field stress. Microelectronics Reliability, Vol. 50, Issue. 12, p. 1961.


Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance

  • Ali Alaeddine (a1) (a2), Moncef Kadi (a1), Kaouther Daoud (a2), Hichame Maanane (a3) and Philippe Eudeline (a3)
  • DOI:
  • Published online: 07 January 2010

This paper deals with the various aspects of electromagnetic field impact modeling on the SiGe heterojunction bipolar transistor (HBT) device for microwave applications. This study differs from conventional HBT device reliability research associated with other stresses. The originality of this study comes from the generation of a localized electromagnetic field using the near-field bench. A coupling phenomenon between the electromagnetic field and the micro-strip lines connecting the transistor are evaluated by electromagnetic and electrical simulations. After stress, the input and the transmission scattering parameters are affected. This is primarily due to the deviation of the input impedance and the reduction of the transconductance, respectively. The stress effects have been related to a base current degradation. This degradation is due to a hot carrier introducing generation/recombination trap centers at the Si/SiO2 interface of the emitter–base spacer oxide, which leads to an excess recombination base current.

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Corresponding author: A. Alaeddine Email:
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International Journal of Microwave and Wireless Technologies
  • ISSN: 1759-0787
  • EISSN: 1759-0795
  • URL: /core/journals/international-journal-of-microwave-and-wireless-technologies
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