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Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance

  • Ali Alaeddine (a1) (a2), Moncef Kadi (a1), Kaouther Daoud (a2), Hichame Maanane (a3) and Philippe Eudeline (a3)...
Abstract

This paper deals with the various aspects of electromagnetic field impact modeling on the SiGe heterojunction bipolar transistor (HBT) device for microwave applications. This study differs from conventional HBT device reliability research associated with other stresses. The originality of this study comes from the generation of a localized electromagnetic field using the near-field bench. A coupling phenomenon between the electromagnetic field and the micro-strip lines connecting the transistor are evaluated by electromagnetic and electrical simulations. After stress, the input and the transmission scattering parameters are affected. This is primarily due to the deviation of the input impedance and the reduction of the transconductance, respectively. The stress effects have been related to a base current degradation. This degradation is due to a hot carrier introducing generation/recombination trap centers at the Si/SiO2 interface of the emitter–base spacer oxide, which leads to an excess recombination base current.

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Corresponding author: A. Alaeddine Email: ali.alaeddine@esigelec.fr
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[1]Frégonèse S.; Avenier G.; Maneux C.; Chantre A.; Zimmer T.: A compact model for SiGe HBT on thin-film SOI. IEEE Trans. Electron Devices, 53 (2006), 296303.
[2]Huang S.-Y. et al. : Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors. Microelectron. Reliab., 48 (2008), 193199.
[3]Régis M. et al. : Noise behaviour in SiGe devices. Solid-State Electron., 45 (2001), 18911897.
[4]Chahine I.; Kadi M.; Gaboriaud E.; Louis A.; Mazari B.: Characterization and modeling of the susceptibility of integrated circuits to conducted electromagnetic disturbances up to 1 GHz. IEEE Trans. EMC, 50 (2008), 285293.
[5]Cressler J.D.: Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy, CRC Press–Taylor and Francis Group, USA, 2006, chap 4.11, 525538.
[6]Zhang S.; Niu G.; Cressler J.D.; Osten H.-J.; Knoll D.: The effects of proton irradiation on SiGe: C HBTs. IEEE Trans. Nucl. Sci., 48 (2001), 22332237.
[7]Bouchelouk L.; Riah Z.; Baudry D.; Kadi M.; Louis A.; Mazari B.: Characterization of electromagnetic fields close to microwave devices using electric dipole probes. Int. J. RF Microw. Comput.-Aided Eng., 18 (2008), 146156.
[8]Baudry D. et al. : Applications of the near-field techniques in EMC investigations. IEEE Trans. EMC, 49 (2007), 485493.
[9]ADS Users Manual, Agilent, (2006).
[10]Antonini G.; Ciccomancini Scogna A.; Orlandi A.: De-embedding procedure based on computed/measured data set for pcb structures characterization. IEEE Trans. Adv. Packag., 27 (2004), 597602.
[11]Fiori F.; Pozzolo V.: Modified Gummel–Poon model for susceptibility prediction. IEEE Trans. Electromagn. Compat., 42 (2000), 206213.
[12]HFSS v10.0 Users Manual, Ansoft, 2006.
[13]Alaeldine A. et al. : A direct power injection model for immunity prediction in integrated circuits. IEEE Trans. EMC, 50 (2008), 5262.
[14]Huang S.Y. et al. : Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors. IEEE Trans. Device Mater. Reliab., 5 (2005), 183189.
[15]Jenkins K.A. et al. : Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stress. IEEE Tech. Dig. Int., 8 (1991), 873876.
[16]Kuchenbecker J. et al. : Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation. Microelectron. Reliab., 40 (2000), 15791584.
[17]Rennane A.; Bary L.; Roux J.L.; Kuchenbecker J.; Graffeuil J.; Plana R.: Reliability properties of SiGe HBTs. Appl. Surf. Sci., 224 (2004), 341346.
[18]Alaeddine A.; Kadi M.; Daoud K.; Beydoun B.; Blavette D.: Characterization and simulation of SiGe HBTs degradation induced by electromagnetic field stress, in Proc. 16th IEEE, Int. Symp. on the Physical & Failure Analysis of Integrated Circuits, China, 2009.
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International Journal of Microwave and Wireless Technologies
  • ISSN: 1759-0787
  • EISSN: 1759-0795
  • URL: /core/journals/international-journal-of-microwave-and-wireless-technologies
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