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Chemical vapor deposition of ruthenium and ruthenium oxide thin films for advanced complementary metal-oxide semiconductor gate electrode applications

Published online by Cambridge University Press:  01 October 2004

Filippos Papadatos ,
Steve Consiglio ,
Spyridon Skordas ,
Eric T. Eisenbraun ,
Alain E. Kaloyeros ,
John Peck ,
David Thompson  and
Cynthia Hoover
Filippos Papadatos
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-State Univeristy of New York, Albany, New York 12203
Steve Consiglio
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-State Univeristy of New York, Albany, New York 12203
Spyridon Skordas
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-State Univeristy of New York, Albany, New York 12203
Eric T. Eisenbraun
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-State Univeristy of New York, Albany, New York 12203
Alain E. Kaloyeros*
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany-State Univeristy of New York, Albany, New York 12203
John Peck
Affiliation:
Praxair Inc., Tonawanda, New York 14151
David Thompson
Affiliation:
Praxair Inc., Tonawanda, New York 14151
Cynthia Hoover
Affiliation:
Praxair Inc., Tonawanda, New York 14151
*
a)Address all correspondence to this author.e-mail: akaloyeros@uamail.albany.edu
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Abstract

A low-temperature (320–480 °C) metal-organic chemical vapor deposition (MOCVD) process was developed for the growth of ruthenium and ruthenium oxide thin films. The process used bis(ethylcyclopentadienyl)ruthenium [Ru(C5H4C2H5)2] and oxygen as, respectively, the ruthenium and oxygen sources. Systematic investigations of film formation mechanisms and associated rate limiting factors that control the nucleation and growth of the Ru and RuO2 phases led to the demonstration that the MOCVD process can be smoothly and reversibly modified to form either Ru or RuO2 through simple and straightforward modifications to the processing conditions–primarily oxygen flow and substrate temperature. In particular, films grown at low oxygen flows (50 sccm) exhibited a metallic Ru phase at processing temperatures below 480 °C. In contrast, films grown at high oxygen flow (300 sccm) were metallic Ru below 400 °C. Above 400 °C, a phase transition was observed from Ru to RuOx (0 < x < 2.0) to RuO2 as the processing temperature was gradually increased to 480 °C.

Keywords

Chemical vapor deposition (CVD)Nucleation & growthElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 10 , October 2004 , pp. 2947 - 2955
Copyright
Copyright © Materials Research Society 2004

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References

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