- Cited by 13
Serrao, Felcy Jyothi and Dharmaprakash, S. M. 2016. Sol ageing effect on the structural, optical and electrical properties of Ga-doped ZnO thin films. Materials Technology, Vol. 31, Issue. 8, p. 443.
Shin, Seung Wook Kim, In Young Kishor, G.V. Yoo, Yeong Yung Kim, Young Baek Heo, Jae Yeong Heo, Gi-Seok Patil, P.S. Kim, Jin Hyeok and Lee, Jeong Yong 2014. Development of flexible Mg and Ga co-doped ZnO thin films with wide band gap energy and transparent conductive characteristics. Journal of Alloys and Compounds, Vol. 585, p. 608.
AlKahlout, Amal 2013. A wet chemical preparation of transparent conducting thin films of Ga-doped ZnO nanoparticles. Journal of Sol-Gel Science and Technology, Vol. 67, Issue. 2, p. 331.
Kim, In Young Shin, Seung Wook Kim, Min Sung Yun, Jae Ho Heo, Gi Seok Jeong, Chae Hwan Moon, Jong-Ha Lee, Jeong Yong and Kim, Jin Hyoek 2013. Effect of Sputtering Powers on Mg and Ga Co-Doped ZnO Thin Films with Transparent Conducting Characteristics. Korean Journal of Materials Research, Vol. 23, Issue. 3, p. 155.
Liu, Yanli Li, Yufang and Zeng, Haibo 2013. ZnO-Based Transparent Conductive Thin Films: Doping, Performance, and Processing. Journal of Nanomaterials, Vol. 2013, p. 1.
Shin, Seung Wook Kim, In Young Jeon, Ki Seok Heo, Jae Yeong Heo, Gi-Seok Patil, P.S. Kim, Jin Hyeok and Lee, Jeong Yong 2013. Wide band gap characteristic of quaternary and flexible Mg and Ga co-doped ZnO transparent conductive thin films. Journal of Asian Ceramic Societies, Vol. 1, Issue. 3, p. 262.
Shin, Seung Wook Agawane, G.L. Kim, In Young Jo, Seung Hyun Kim, Min Sung Heo, Gi-Seok Kim, Jin Hyeok and Lee, Jeong Yong 2013. Development of transparent conductive Mg and Ga co-doped ZnO thin films: Effect of Mg concentration. Surface and Coatings Technology, Vol. 231, p. 364.
Shin, Seung Wook Agawane, G.L. Kim, In Young Kwon, Ye Bin Jung, In Ok Gang, Myeng Gil Moholkar, A.V. Moon, Jong-Ha Kim, Jin Hyeok and Lee, Jeong Yong 2012. Low temperature epitaxial growth and characterization of Ga-doped ZnO thin films on Al2O3 (0001) substrates prepared with different buffer layers. Applied Surface Science, Vol. 258, Issue. 12, p. 5073.
Kim, Ji-Hong Roh, Ji-Hyung Lee, Kyung-Ju Moon, Sung-Joon Kim, Jae-Won Do, Kang-Min Moon, Byung-Moo and Koo, Sang-Mo 2011. Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO3 and SrTiO3 substrates. Journal of Crystal Growth, Vol. 334, Issue. 1, p. 72.
Le, Hong Quang and Chua, Soo Jin 2011. Gallium and indium co-doping of epitaxial zinc oxide thin films grown in water at 90 °C. Journal of Physics D: Applied Physics, Vol. 44, Issue. 12, p. 125104.
Shin, Seung Wook Kwon, Ye Bin Moholkar, A.V. Heo, Gi-Seok Jung, In Ok Moon, Jong-Ha Kim, Jin Hyeok and Lee, Jeong Yong 2011. Hydrothermally grown ZnO buffer layer for the growth of highly (4wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (111) substrates. Journal of Crystal Growth, Vol. 322, Issue. 1, p. 45.
Shin, Seung Wook Lee, Gyoung Hoon Moholkar, A.V. Moon, Jong-Ha Heo, Gi-Seok Kim, Tae-Won Kim, Jin Hyeok and Lee, Jeong Yong 2011. A study on the epitaxy nature and properties of 3wt% Ga-doped epitaxial ZnO thin film on Al2O3 (0001) substrates. Journal of Crystal Growth, Vol. 322, Issue. 1, p. 51.
Wook Shin, Seung Ung Sim, Kyu Pawar, S.M. Moholkar, A.V. Ok Jung, In Ho Yun, Jae Moon, Jong-Ha Hyeok Kim, Jin and Yong Lee, Jeong 2010. Effect of a ZnO buffer layer on the properties of Ga-doped ZnO thin films grown on Al2O3 (0001) substrates at a low growth temperature of 250°C. Journal of Crystal Growth, Vol. 312, Issue. 9, p. 1551.
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Thin films of Ga-doped ZnO (GZO) were prepared on glass and Al2O3 (0001) substrates by using RF magnetron sputtering at a substrate temperature of 350 °C, RF power of 175 W, and working pressure of 6 mTorr. The effect of film thickness and substrate type on the structural and electrical properties of the thin films was investigated. X-ray diffraction study showed that GZO thin films on glass substrates were grown as a polycrystalline hexagonal wurtzite phase with a c-axis preferred, out-of-plane orientation and random in-plane orientation. However, GZO thin films on Al2O3 (0001) substrates were epitaxially grown with an orientation relationship of . The structural images from scanning electron microscopy and atomic force microscopy showed that the GZO thin films on glass substrates had a rougher surface morphology than those on Al2O3 (0001) substrates. The electrical resistivity of 1000 nm-thick GZO thin films grown on glass and Al2O3 (0001) substrates was 3.04 × 10−4 Ωcm and 1.50 × 10−4 Ωcm, respectively. It was also found that the electrical resistivity difference between the films on the two substrates decreased from 9.48 × 10−4 Ωcm to 1.45 × 10−4 Ωcm with increasing the film thickness from 100 nm to 1000 nm.
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