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Epitaxial growth of NiSi2 induced by sulfur segregationat the NiSi2/Si(100) interface

  • Q.T. Zhao (a1), S.B. Mi (a2), C.L. Jia (a2), C. Urban (a3), C. Sandow (a3), S. Habicht (a3) and S. Mantl (a3)...
Abstract

Epitaxial growth of a NiSi2 layer was observed on S+ ion-implanted Si(100) at a low temperature of 550 °C. Depending on the S+ dose and the Ni thickness, we identified different nickel silicide phases. High quality and uniform epitaxial NiSi2 layers formed at temperatures above 700 °C with a 20-nm Ni on high dose S+ implanted Si(100), whereas no epitaxy was observed for a 36-nm Ni layer. We assume that the presence of sulfur at the silicide/Si(100) interface favors the nucleation of the NiSi2 phase. The S atom distributions showed ultrasteep S depth profiles (3 nm/decade) in the silicon, which results from the snow-plow effect during silicidation and the segregation of S to the interface due to the low solubility of S in both Si and the silicide.

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a) Address all correspondence to this author. e-mail: q.zhao@fz-juelich.de
References
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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
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