Skip to main content

Formation and thermal stability of 2D ordered SiC/Si(001) nanodots

  • Christopher W. Petz (a1), Dongyue Yang (a2), Jeremy Levy (a2) and Jerrold A. Floro (a3)

Precise spatial ordering of quantum dots (QDs) may enable predictable quantum states due to direct exchange interactions of confined carriers. The realization of predictable quantum states may lead to unique functionalities such as spin cluster qubits and spintronic band gap systems. To define exemplary quantum architectures, one must develop control over QD size and spatial arrangement on the sub-35-nm length scale. We use fine-probe electron beam irradiation to locally decompose ambient hydrocarbons onto a bare Si(001) surface. These carbonaceous patterns are annealed in ultrahigh vacuum (UHV), forming ordered arrays of nanoscale SiC QDs. We have achieved sub-10-nm diameter epitaxially oriented 3C-SiC nanodots with interdot spacings down to 22.5 nm. We investigate the templated feature evolution during UHV annealing and subsequent Ge epitaxial overgrowth to identify key mechanisms that must be controlled to preserve pattern fidelity and reduce broadening of the nanodot distribution.

Corresponding author
a)Address all correspondence to this author. e-mail:
Hide All
1.Meier, F., Levy, J., and Loss, D.: Quantum computing with spin cluster qubits. Phys. Rev. Lett. 90, 047901 (2003).
2.Meier, F., Levy, J., and Loss, D.: Quantum computing with antiferromagnetic spin clusters. Phys. Rev. B 68, 134417 (2003).
3.Pryor, C.E., Flatté, M.E., and Levy, J.: Electrical manipulation of an electronic two-state system in Ge quantum dots. Appl. Phys. Lett. 95, 232103 (2009).
4.Guise, O., Marbach, H., Levy, J., Ahner, J., and Yates, J.T. Jr.: Electron-beam-induced deposition of carbon films on Si(1 0 0) using chemisorbed ethylene as a precursor molecule. Surf. Sci. 571, 128138 (2004).
5.Guise, O., Ahner, J., Yates, J., and Levy, J.: Formation and thermal stability of sub-10-nm carbon templates on Si(100). Appl. Phys. Lett. 85, 23522354 (2004).
6.Guise, O.: Patterning of sub-10-nm Ge islands on Si(100) by directed self-assembly. Appl. Phys. Lett. 87, 171902 (2005).
7.Petz, C.W., Yang, D., Levy, J., and Floro, J.A.: Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning. Appl. Phys. Lett. 100, 141603 (2012).
8.Katsaros, G.: Investigating the lateral motion of SiGe islands by selective chemical etching. Surf. Sci. 600, 26082613 (2006).
9.Merdzhanova, T., Rastelli, A., Stoffel, M., Kiravittaya, S., and Schmidt, O.G.: Island motion triggered by the growth of strain-relaxed SiGe/Si(0 0 1) islands. J. Crystal Growth 301302, 319323 (2007).
10.Danzebrink, H-U., Koenders, L., Wilkening, G., Yacoot, A., and Kunzmann, H.: Advances in scanning force microscopy for dimensional metrology. CIRP Ann. Manuf. Sci. Technol. 55, 841878 (2006).
11.Chung, C.K. and Wu, B.H.: Effect of substrate temperature on the in-situ formation of crystalline SiC nanostructured film using ultra-high-vacuum ion beam sputtering. J. Nanosci. Nanotechnol. 10, 46794683 (2010).
12.Chung, C-K. and Wu, B-H.: Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering. Nanotechnology 17, 31293133 (2006).
13.Krishnamurthy, M., Drucker, J.S., and Challa, A.: Epitaxial growth and characterization of Ge1−xCx alloys on Si(100). J. Appl. Phys. 78, 7070 (1995).
14.Palmstrom, C.J.: Epitaxy of dissimilar materials. Annu. Rev. Mater. Sci. 25, 389415 (1995).
15.Trampert, A.: Heteroepitaxy of dissimilar materials: Effect of interface structure on strain and defect formation. Physica E 13, 11191125 (2002).
16.Floro, J.A., Michael, J.R., Brewer, L.N., and Hsu, J.W.P.: Preferred heteroepitaxial orientations of ZnO nanorods on Ag. J. Mater. Res. 25, 13521361 (2010).
17.Yang, D., Petz, C.W., and Floro, J.A., and Levy, J.: Unpublished.
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
Please enter your name
Please enter a valid email address
Who would you like to send this to? *


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed