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Growth morphologies and mechanisms of non-equilibrium solidified MC carbide

Published online by Cambridge University Press:  01 February 2006

Y. Chen  and
H.M. Wang
Y. Chen*
Affiliation:
Laboratory for Laser Intelligent Manufacturing, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China; and Laboratory of Laser Materials Processing and Surface Engineering, School of Materials Science and Engineering, Beijinghang University, Beijing 100083, People’s Republic of China
H.M. Wang
Affiliation:
Laboratory of Laser Materials Processing and Surface Engineering, School of Materials Science and Engineering, Beijinghang University, Beijing 100083, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: chenyao27@163.com
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Abstract

Growth morphologies and mechanisms of the carbide of group IVB and VB elements (MC carbide), a typical faceted crystal, were studied with an estimated cooling rate from 102 to 105 K/s. Results showed that although the growth morphologies of the MC carbide vary remarkably with solidification cooling rate, the solid/liquid interface is always atomically smooth, and the growth mechanisms are always lateral growth. The growth mechanism transition from lateral to continuous growth mode, which was predicted by the classic crystal growth theory, was not observed for the TiC type MC carbide within the estimated cooling rate range of 102–105 K/s.

Keywords

Crystal growthLaser-induced reactionMorphology
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 2 , February 2006 , pp. 375 - 379
Copyright
Copyright © Materials Research Society 2006

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References

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