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Influence of substrate annealing on the epitaxial growth of BaTiO3 thin films by metal-organic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Cheol Seong Hwang ,
Mark D. Vaudin  and
Gregory T. Stauf
Cheol Seong Hwang
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Mark D. Vaudin
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Gregory T. Stauf
Affiliation:
Advanced Technology Materials, 7 Commerce Drive, Danbury, Connecticut 06810
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Abstract

BaTiO3 thin films were deposited by metal-organic chemical vapor deposition at 840 °C on two differently treated (100) MgO single crystal substrates. One MgO substrate was only mechanically polished and the other substrate was polished and then annealed at 1100 °C for 4 h in oxygen. Observation by transmission electron microscopy showed that the BaTiO3 thin film deposited on the unannealed substrate was fine-grained and that the whole film was epitaxial (100) in nature. In contrast, the film deposited on the annealed substrate consisted of large, (100)-oriented, epitaxial grains within which were distributed (110)-oriented grains with random in-plane orientations. These differences in BaTiO3 films deposited on differently treated substrates are discussed with reference to the surface structure of the MgO substrate and nucleation kinetics of BaTiO3 thin films on MgO.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 6 , June 1997 , pp. 1625 - 1633
Copyright
Copyright © Materials Research Society 1997

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