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Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals

  • Takeshi Ohgaki (a1), Naoki Ohashi (a1), Shigeaki Sugimura (a1), Haruki Ryoken (a1), Isao Sakaguchi (a1), Yutaka Adachi (a1) and Hajime Haneda (a1)...
Abstract

We report on the effect of sample non-uniformity on the results of Hall-effect measurements. False positive Hall coefficients were obtained from an evidently n-type ZnO single crystal, although four electrodes with low contact resistance were made and the Van der Pauw parameter for this electrode configuration was close to 1.00. Further position-sensitive characterization revealed that the false positive Hall coefficient was due to non-uniform electrical properties of the sample. To demonstrate a false positive sign of the Hall coefficient due to sample non-uniformity, we devised a model structure made from evident n-type ZnO thin film and successfully reproduced a false positive Hall coefficient from n-type ZnO.

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a) Address all correspondence to this author. e-mail: OGAKI.Takeshi@nims.go.jp
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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
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