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Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon

  • W. Sinke (a1), F. W. Saris (a1), J. C. Barbour (a2) and J. W. Mayer (a2)
  • DOI:
  • Published online: 01 March 2011

Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 800°–1000 °C.

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