Skip to main content
    • Aa
    • Aa

Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide

  • Laura Jamison (a1), Kumar Sridharan (a2), Steve Shannon (a3) and Izabela Szlufarska (a4)

The grain size dependence of the radiation response of silicon carbide (SiC) has been studied under 1.0 MeV Kr2+ ion irradiation. It was found that radiation resistance decreased with grain refinement, in contrast to previous studies on the same nanocrystalline (nc) SiC material using Si ion and high voltage electron irradiation. The effect of grain size on radiation response may depend upon the ion species used due to a potential change in amorphization mechanism. It was also determined that temperature had a strong effect on the grain size dependence of the radiation response in SiC due to the activation temperatures of critical recombination and migration reactions. This work explores the possible impacts of irradiation species, temperature, and experimental design on the radiation response of SiC.

Corresponding author
a)Address all correspondence to this author. e-mail:
Linked references
Hide All

This list contains references from the content that can be linked to their source. For a full set of references and notes please see the PDF or HTML where available.

L.H. Ford , N.S. Hibbert , and D.G. Martin : Recent developments of coatings for GCFR and HTGCR fuel particles and their performance. J. Nucl. Mater. 45(2), 139 (1972).

R.A. Verrall , M.D. Vlajic , and V.D. Krstic : Silicon carbide as an inert-matrix for a thermal reactor fuel. J. Nucl. Mater. 274(1–2), 54 (1999).

B. Radiguet , A. Etienne , P. Pareige , X. Sauvage , and R. Valiev : Irradiation behavior of nanostructured 316 austenitic stainless steel. J. Mater. Sci. 43(23–24), 7338 (2008).

A.R. Kilmametov , D.V. Gunderov , R.Z. Valiev , A.G. Balogh , and H. Hahn : Enhanced ion irradiation resistance of bulk nanocrystalline TiNi alloy. Scr. Mater. 59(10), 1027 (2008).

T.D. Shen , S. Feng , M. Tang , J.A. Valdez , Y. Wang , and K.E. Sickafus : Enhanced radiation tolerance in nanocrystalline MgGa2O4. Appl. Phys. Lett. 90(26), 263115 (2007).

Y. Zhang , M. Ishimaru , T. Varga , T. Oda , C. Hardiman , H. Xue , Y. Katoh , S. Shannon , and W.J. Weber : Nanoscale engineering of radiation tolerant silicon carbide. Phys. Chem. Chem. Phys. 14, 13429 (2012).

L. Jamison , M-J. Zheng , S. Shannon , T. Allen , D. Morgan , and I. Szlufarska : Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation. J. Nucl. Mater. 445(1–3), 181 (2014).

W. Jiang , H. Wang , I. Kim , I.T. Bae , G. Li , P. Nachimuthu , Z. Zhu , Y. Zhang , and W.J. Weber : Response of nanocrystalline 3C silicon carbide to heavy-ion irradiation. Phys. Rev. B 80(16), 161301 (2009).

W. Jiang , L. Jiao , and H. Wang : Transition from irradiation-induced amorphization to crystallization in nanocrystalline silicon carbide. J. Am. Ceram. Soc. 94(12), 4127 (2011).

C. Jiang , N. Swaminathan , D. Morgan , and I. Szlufarska : Effect of grain boundary stresses on sink strength. Mater. Res. Lett. 2(2), 100 (2014).

N. Swaminathan , P.J. Kamenski , D. Morgan , and I. Szlufarska : Effects of grain size and grain boundaries on defect production in nanocrystalline 3C–SiC. Acta Mater. 58(8), 2843 (2010).

D.A. Petti , J. Buongiorno , J.T. Maki , R.R. Hobbins , and G.K. Miller : Key differences in the fabrication, irradiation and high temperature accident testing of US and German TRISO-coated particle fuel, and their implications on fuel performance. Nucl. Eng. Des. 222(2–3), 281 (2003).

L.L. Snead , T. Nozawa , Y. Katoh , T-S. Byun , S. Kondo , and D.A. Petti : Handbook of SiC properties for fuel performance modeling. J. Nucl. Mater. 371(1–3), 329 (2007).

H. Inui , H. Mori , and H. Fujita : Electron-irradiation-induced crystalline to amorphous transition in alpha-SiC single crystals. Philos. Mag. B 61(1), 107 (1990).

H. Inui , H. Mori , A. Suzuki , and H. Fujita : Electron-irradiation-induced crystalline-to-amorphous transition in beta-SiC single crystals. Philos. Mag. B 65(1), 1 (1992).

R. Devanathan and W.J. Weber : Displacement energy surface in 3C and 6H SiC. J. Nucl. Mater. 278(2–3), 258 (2000).

W.J. Weber , L.M. Wang , and N. Yu : The irradiation-induced crystalline-to-amorphous phase transition in α-SiC. Nucl. Instrum. Methods Phys. Res., Sect. B 116(1–4), 322 (1996).

N. Swaminathan , D. Morgan , and I. Szlufarska : Role of recombination kinetics and grain size in radiation-induced amorphization. Phys. Rev. B 86(21), 214110 (2012).

G.A. Kachurin , M.O. Ruault , A.K. Gutakovsky , O. Kaı̈tasov , S.G. Yanovskaya , K.S. Zhuravlev , and H. Bernas : Light particle irradiation effects in Si nanocrystals. Nucl. Instrum. Methods Phys. Res., Sect. B 147(1–4), 356 (1999).

B. Johannessen , P. Kluth , D.J. Llewellyn , G.J. Foran , D.J. Cookson , and M.C. Ridgway : Amorphization of embedded Cu nanocrystals by ion irradiation. Appl. Phys. Lett. 90(7), 073119 (2007).

Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
  • URL: /core/journals/journal-of-materials-research
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
Type Description Title
Supplementary Materials

Jamison et al. supplementary material
Supplementary figure

 Word (101 KB)
101 KB


Full text views

Total number of HTML views: 1
Total number of PDF views: 25 *
Loading metrics...

Abstract views

Total abstract views: 100 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 25th June 2017. This data will be updated every 24 hours.