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An Improved STEM/EDX Quantitative Method for Dopant Profiling at the Nanoscale

Published online by Cambridge University Press:  10 January 2020

Raghda Makarem
Affiliation:
LPCNO, Université de Toulouse INSA, CNRS, UPS 135, Avenue de Rangueil, 31077Toulouse, France
Filadelfo Cristiano
Affiliation:
LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, F-31400Toulouse, France
Dominique Muller
Affiliation:
ICube Laboratory, Université de Strasbourg and CNRS, B.P. 20, 67037Strasbourg Cedex, France
Pier Francesco Fazzini
Affiliation:
LPCNO, Université de Toulouse INSA, CNRS, UPS 135, Avenue de Rangueil, 31077Toulouse, France
Corresponding
E-mail address:

Abstract

In this paper, an improved quantification technique for STEM/EDX measurements of 1D dopant profiles based on the Cliff-Lorimer equation is presented. The technique uses an iterative absorption correction procedure based on density models correlating the local mass density and composition of the specimen. Moreover, a calibration and error estimation procedure based on linear regression and error propagation is proposed in order to estimate the total measurement error in the dopant density. The proposed approach is applied to the measurement of the As profile in a nanodevice test structure. For the calibration, two crystalline Si specimens implanted with different As doses have been used, and the calibration of the Cliff-Lorimer coefficients has been carried out using Rutherford Back Scattering measurements. The As profile measurement has been carried out on an FinFET test structure, showing that quantitative results can be obtained in the nanometer scale and for dopant atomic densities lower than 1%. Using the proposed approach, the measurement error and detection limit for our experimental setup are calculated and the possibility to improve this limit by increasing the observation time is discussed.

Type
Materials Science Applications
Copyright
Copyright © Microscopy Society of America 2020

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