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Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films

Published online by Cambridge University Press:  23 November 2012

C. Trager-Cowan
Affiliation:
Physics, University of Strathclyde, Glasgow, United Kingdom
G. Naresh-Kumar
Affiliation:
Physics, University of Strathclyde, Glasgow, United Kingdom
B. Hourahine
Affiliation:
Physics, University of Strathclyde, Glasgow, United Kingdom
P.R. Edwards
Affiliation:
Physics, University of Strathclyde, Glasgow, United Kingdom
J. Bruckbauer
Affiliation:
Physics, University of Strathclyde, Glasgow, United Kingdom
R.W. Martin
Affiliation:
Physics, University of Strathclyde, Glasgow, United Kingdom
C. Mauder
Affiliation:
AIXTRON SE, Herzogenrath, Germany
A.P. Day
Affiliation:
Aunt Daisy Scientific, Lydney, United Kingdom
G. England
Affiliation:
K.E. Developments, Cambridge, United Kingdom
A. Winkelmann
Affiliation:
Max-Planck-Institut fur Mikrostrukturphysik, Halle, Germany
P.J. Parbrook
Affiliation:
Tyndall National Institute, Cork, Ireland
A. Wilkinson
Affiliation:
University of Oxford, Oxford, United Kingdom

Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Type
Research Article
Copyright
Copyright © Microscopy Society of America 2012

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