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Inelastic Scattering in Electron Backscatter Diffraction and Electron Channeling Contrast Imaging

Published online by Cambridge University Press:  16 November 2020

Budhika G. Mendis*
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, UK
Juri Barthel
Affiliation:
Ernst Ruska Centre (ER-C), Forschungszentrum Jülich GmbH, Jülich 52425, Germany
Scott D. Findlay
Affiliation:
School of Physics and Astronomy, Monash University, Clayton, VIC 3800, Australia
Leslie J. Allen
Affiliation:
School of Physics, University of Melbourne, Parkville, VIC 3010, Australia
*
*Author for correspondence: Budhika G. Mendis, E-mail: b.g.mendis@durham.ac.uk

Abstract

Electron backscatter diffraction (EBSD) and electron channeling contrast imaging (ECCI) are used to extract crystallographic information from bulk samples, such as their crystal structure and orientation as well as the presence of any dislocation and grain boundary defects. These techniques rely on the backscattered electron signal, which has a large distribution in electron energy. Here, the influence of plasmon excitations on EBSD patterns and ECCI dislocation images is uncovered by multislice simulations including inelastic scattering. It is shown that the Kikuchi band contrast in an EBSD pattern for silicon is maximum at small energy loss (i.e., few plasmon scattering events following backscattering), consistent with previous energy-filtered EBSD measurements. On the other hand, plasmon excitation has very little effect on the ECCI image of a dislocation. These results are explained by examining the role of the characteristic plasmon scattering angle on the intrinsic contrast mechanisms in EBSD and ECCI.

Type
Software and Instrumentation
Copyright
Copyright © The Author(s), 2020. Published by Cambridge University Press on behalf of the Microscopy Society of America

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