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Off-Axis Electron Holography of Unbiased and Reverse-Biased Focused Ion Beam Milled Si p-n Junctions

Published online by Cambridge University Press:  28 January 2005

Alison C. Twitchett
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK
Rafal E. Dunin-Borkowski
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK
Robert J. Hallifax
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK
Ronald F. Broom
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK
Paul A. Midgley
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK

Abstract

Off-axis electron holography is used to measure electrostatic potential profiles across a silicon p-n junction, which has been prepared for examination in the transmission electron microscope (TEM) in two different specimen geometries using focused ion beam (FIB) milling. Results are obtained both from a conventional unbiased FIB-milled sample and using a novel sample geometry that allows a reverse bias to be applied to an FIB-milled sample in situ in the TEM. Computer simulations are fitted to the results to assess the effect of TEM specimen preparation on the charge density and the electrostatic potential in the thin sample.

Type
MATERIALS APPLICATIONS
Copyright
© 2005 Microscopy Society of America

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Off-Axis Electron Holography of Unbiased and Reverse-Biased Focused Ion Beam Milled Si p-n Junctions
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