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Quantification of Sample Thickness and In-Concentration of InGaAs Quantum Wells by Transmission Measurements in a Scanning Electron Microscope

Published online by Cambridge University Press:  16 July 2010

T. Volkenandt
Affiliation:
Laboratorium für Elektronenmikroskopie, Karlsruher Institut für Technologie (KIT), 76128 Karlsruhe, Germany
E. Müller
Affiliation:
Laboratorium für Elektronenmikroskopie, Karlsruher Institut für Technologie (KIT), 76128 Karlsruhe, Germany Center for Functional Nanostructures (CFN), Karlsruher Institut für Technologie (KIT), 76128 Karlsruhe, Germany
D.Z. Hu
Affiliation:
Institut für Angewandte Physik and CFN, Karlsruher Institut für Technologie (KIT), 76128 Karlsruhe, Germany
D.M. Schaadt
Affiliation:
Institut für Angewandte Physik and CFN, Karlsruher Institut für Technologie (KIT), 76128 Karlsruhe, Germany
D. Gerthsen
Affiliation:
Laboratorium für Elektronenmikroskopie, Karlsruher Institut für Technologie (KIT), 76128 Karlsruhe, Germany Center for Functional Nanostructures (CFN), Karlsruher Institut für Technologie (KIT), 76128 Karlsruhe, Germany
Corresponding
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Abstract

High-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) images of electron-transparent samples show dominant atomic number (Z-) contrast with a high lateral resolution. HAADF STEM at low electron energies <30 keV is applied in this work for quantitative composition analyses of InGaAs quantum wells. To determine the local composition, normalized experimental image intensities are compared with results of Monte Carlo simulations. For verification of the technique, InGaAs/GaAs quantum-well structures with known In concentration are used. Transmission electron microscopy samples with known thickness are prepared by the focused-ion-beam technique. The method can be extended to other material systems and is particularly promising for the analysis of materials that are sensitive toward knock-on damage.

Type
STEM Development and Applications
Copyright
Copyright © Microscopy Society of America 2010

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Quantification of Sample Thickness and In-Concentration of InGaAs Quantum Wells by Transmission Measurements in a Scanning Electron Microscope
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