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Calculation of the Surface Excitation Parameter for Si and Ge from Measured Electron Backscattered Spectra by Means of a Monte-Carlo Simulation

Published online by Cambridge University Press:  01 August 2003

Gábor Tamás Orosz ,
Attila Sulyok ,
György Gergely ,
Sándor Gurbán  and
Miklós Menyhard
Gábor Tamás Orosz
Affiliation:
Research Institute for Technical Physics and Material Sciences, Surface Physics Department, H-1121 Budapest, Konkoly-Thege út 29-33, Hungary
Attila Sulyok
Affiliation:
Research Institute for Technical Physics and Material Sciences, Surface Physics Department, H-1121 Budapest, Konkoly-Thege út 29-33, Hungary
György Gergely
Affiliation:
Research Institute for Technical Physics and Material Sciences, Surface Physics Department, H-1121 Budapest, Konkoly-Thege út 29-33, Hungary
Sándor Gurbán
Affiliation:
Research Institute for Technical Physics and Material Sciences, Surface Physics Department, H-1121 Budapest, Konkoly-Thege út 29-33, Hungary
Miklós Menyhard
Affiliation:
Research Institute for Technical Physics and Material Sciences, Surface Physics Department, H-1121 Budapest, Konkoly-Thege út 29-33, Hungary
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Abstract

A new Monte Carlo method has been developed for simulating backscattered electron spectra, and this was applied for determining the surface excitation parameter (SEP). The simulation is based on direct tracking of electron trajectories in the solid, taking into account elastic and inelastic events. The elastic scattering cross sections are taken from literature, while inelastic cross section data are obtained by a fitting procedure. After some iterations, the program produces electron spectra fitting well to the experimental ones. Si and Ge electron spectra were simulated and SEP values were calculated. The SEP values are compared to other ones from literature.

Keywords

electron spectroscopyMonte Carlo methodsurface excitation parameter
Type
Fifth EMAS Regional Workshop: Electron Probe Microanalysis Today—Practical Aspects
Information
Microscopy and Microanalysis , Volume 9 , Issue 4 , August 2003 , pp. 343 - 348
Copyright
© 2003 Microscopy Society of America

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