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    Hernández-Saz, J. Herrera, M. Molina, S.I. Stanley, C.R. and Duguay, S. 2016. Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness. Acta Materialia, Vol. 103, p. 651.

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    Reyes, D F Ulloa, J M Guzman, A Hierro, A Sales, D L Beanland, R Sanchez, A M and González, D 2015. Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots. Semiconductor Science and Technology, Vol. 30, Issue. 11, p. 114006.

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    Molina, Sergio I. 2011. 2011 37th IEEE Photovoltaic Specialists Conference. p. 003360.


Compositional Analysis with Atomic Column Spatial Resolution by 5th-Order Aberration-Corrected Scanning Transmission Electron Microscopy


We show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an InxGa1−xAs multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells. Appl Phys Lett61, 557–559].

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Microscopy and Microanalysis
  • ISSN: 1431-9276
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