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Correlative HAADF-STEM and EDX-STEM Tomography for the 3D Morphological and Elemental Analysis of FinFET Semiconductor Devices

Published online by Cambridge University Press:  01 August 2018

Julien Sorel
Affiliation:
Univ. Grenoble Alpes, CEA, LETI, Grenoble, France. Univ Lyon, INSA-Lyon, Universite C. Bernard Lyon 1, Villeurbanne Cedex, France.
Martin Jacob
Affiliation:
Univ. Grenoble Alpes, CEA, LETI, Grenoble, France.
Toby Sanders
Affiliation:
School of Mathematical and Statistical Sciences, Arizona State University, Tempe, AZ.
Adeline Grenier
Affiliation:
Univ. Grenoble Alpes, CEA, LETI, Grenoble, France.
Rafael Bortolin Pinheiro
Affiliation:
Univ. Grenoble Alpes, CEA, LETI, Grenoble, France.
Frederic Mazen
Affiliation:
Univ. Grenoble Alpes, CEA, LETI, Grenoble, France.
Thierry Epicier
Affiliation:
Univ Lyon, INSA-Lyon, Universite C. Bernard Lyon 1, Villeurbanne Cedex, France.
Zineb Saghi
Affiliation:
Univ. Grenoble Alpes, CEA, LETI, Grenoble, France.

Abstract

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Type
Abstract
Copyright
© Microscopy Society of America 2018 

References

[1] Kubel, C., et al, Microsc. Microanal. 111 2005) p. 378.Google Scholar
[2] Lepinay, K., et al, Micron 47 2013) p. 43.Google Scholar
[3] De La Pena, F., et al, Hyperspy 1, 3. ed. Zenodo.Google Scholar
[4] Sanders, T., et al, Adv. Struct. Chem. Imaging 1 2015.Google Scholar