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A Method for Directly Correlating Site-Specific Cross-Sectional and Plan-View Transmission Electron Microscopy of Individual Nanostructures

  • Daniel K. Schreiber (a1) (a2), Praneet Adusumilli (a1), Eric R. Hemesath (a1), David N. Seidman (a1) (a3), Amanda K. Petford-Long (a1) (a2) (a4) and Lincoln J. Lauhon (a1)...

A sample preparation method is described for enabling direct correlation of site-specific plan-view and cross-sectional transmission electron microscopy (TEM) analysis of individual nanostructures by employing a dual-beam focused-ion beam (FIB) microscope. This technique is demonstrated using Si nanowires dispersed on a TEM sample support (lacey carbon or Si-nitride). Individual nanowires are first imaged in the plan-view orientation to identify a region of interest; in this case, impurity atoms distributed at crystalline defects that require further investigation in the cross-sectional orientation. Subsequently, the region of interest is capped with a series of ex situ and in situ deposited layers to protect the nanowire and facilitate site-specific lift-out and cross-sectioning using a dual-beam FIB microscope. The lift-out specimen is thinned to electron transparency with site-specific positioning to within ∼200 nm of a target position along the length of the nanowire. Using the described technique, it is possible to produce correlated plan-view and cross-sectional view lattice-resolved TEM images that enable a quasi-3D analysis of crystalline defect structures in a specific nanowire. While the current study is focused on nanowires, the procedure described herein is general for any electron-transparent sample and is broadly applicable for many nanostructures, such as nanowires, nanoparticles, patterned thin films, and devices.

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J.E. Allen , E.R. Hemesath , D.E. Perea , J.L. Lensch-Falk , Z.Y. Li , F. Yin , M.H. Gass , P. Wang , A.L. Bleloch , R.E. Palmer & L.J. Lauhon (2008). High-resolution detection of Au catalyst atoms in Si nanowires. Nat Nanotechnol 3, 168173.

W.M. Bullis (1966). Properties of gold in silicon. Solid State Electron 9, 143168.

E. Davison & W. Colquhoun (1985). Ultrathin formvar support films for transmission electron-microscopy. J Electron Microsc Techniq 2, 3543.

A.E.M. De Veirman (2003). ‘3-Dimensional’ TEM silicon-device analysis by combining plan-view and FIB sample preparation. Mat Sci Eng B-Solid 102, 6369.

P. Ercius , L.M. Gignac , C.K. Hu & D.A. Muller (2009). Three-dimensional measurement of line edge roughness in copper wires using electron tomography. Microsc Microanal 15, 244250.

A. Fissel , E. Bugiel , C.R. Wang & H.J. Osten (2006). Formation of Si twinning-superlattice: First step towards Si polytype growth. Mat Sci Eng B-Solid 134, 138141.

L.A. Giannuzzi & F.A. Stevie (1999). A review of focused ion beam milling techniques for TEM specimen preparation. Micron 30, 197204.

E.R. Hemesath , D.K. Schreiber , E.B. Gulsoy , C.F. Kisielowski , A.K. Petford-Long , P.W. Voorhees & L.J. Lauhon (2011). Catalyst incorporation at defects during nanowire growth. Nano Lett 12, 167171.

E.R. Hemesath , D.K. Schreiber , C.F. Kisielowski , A.K. Petford-Long & L.J. Lauhon (2012). Atomic structural analysis of nanowire defects and polytypes enabled through cross-sectional lattice imaging. Small 201102404.

L. Hillmann , R. Prang , U. Muhle & I. Osterreicher (2009). TEM preparation in three spatial directions for a defect analysis. Prakt Metallogr-Pr M 46, 292302.

X.X. Ke , S. Bals , D. Cott , T. Hantschel , H. Bender & G. Van Tendeloo (2010). Three-dimensional analysis of carbon nanotube networks in interconnects by electron tomography without missing wedge artifacts. Microsc Microanal 16, 210217.

R.M. Langford (2006). Focused ion beams techniques for nanomaterials characterization. Microsc Res Techniq 69, 538549.

F.J. Lopez , E.R. Hemesath & L.J. Lauhon (2009). Ordered stacking fault arrays in silicon nanowires. Nano Lett 9, 27742779.

P.A. Midgley & M. Weyland (2003). 3D electron microscopy in the physical sciences: The development of Z-contrast and EFTEM tomography. Ultramicroscopy 96, 413431.

C. Phatak , A.K. Petford-Long & M. De Graef (2010). Three-dimensional study of the vector potential of magnetic structures. Phys Rev Lett 104, 253901.

J.D. Rittner & D.N. Seidman (1997). Solute-atom segregation to ⟨110⟩ symmetric tilt grain boundaries. Acta Mater 45, 31913202.

V. Schmidt , J.V. Wittemann , S. Senz & U. Gosele (2009). Silicon nanowires: A review on aspects of their growth and their electrical properties. Adv Mater 21, 26812702.

E.J. Schwalbach & P.W. Voorhees (2008). Phase equilibrium and nucleation in VLS-grown nanowires. Nano Lett 8, 37393745.

G.J. Sprokel & J.M. Fairfiel (1965). Diffusion of gold into silicon crystals. J Electrochem Soc 112, 200203.

M. Sugiyama & G. Sigesato (2004). A review of focused ion beam technology and its applications in transmission electron microscopy. J Electron Microsc 53, 527536.

K. Thompson , D. Lawrence , D.J. Larson , J.D. Olson , T.F. Kelly & B. Gorman (2007). In situ site-specific specimen preparation for atom probe tomography. Ultramicroscopy 107, 131139.

R.S. Wagner & W.C. Ellis (1964). Vapor-liquid-solid mechanism of single crystal growth (new method growth catalysis from impurity whisker epitaxial + large crystals Si E). Appl Phys Lett 4, 8990.

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Microscopy and Microanalysis
  • ISSN: 1431-9276
  • EISSN: 1435-8115
  • URL: /core/journals/microscopy-and-microanalysis
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