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Elastic Properties of GaN Nanowires: Revealing the influence of planar defects on Young's modulus at nanoscale

Published online by Cambridge University Press:  23 September 2015

Sheng Dai ,
Jiong Zhao ,
Xiaoguang Wang ,
Zhiwei Shan  and
Jing Zhu
Sheng Dai
Affiliation:
Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA.
Jiong Zhao
Affiliation:
Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
Xiaoguang Wang
Affiliation:
Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano) & Hysitron Applied Research Center in China (HARCC), Xi'an Jiaotong University, Xi'an, 710049, China.
Zhiwei Shan
Affiliation:
Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano) & Hysitron Applied Research Center in China (HARCC), Xi'an Jiaotong University, Xi'an, 710049, China.
Jing Zhu
Affiliation:
Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 1915 - 1916
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Dai, S, Zhao, J, He, M, et al., Nano Letters 15 (2015) 8.Google Scholar
[2] Dai, S, Zhao, J, He, M, et al., J. Phys. Chem. C 117 (2013) 12895.Google Scholar