Evaluation of Defect Structures from In Situ Dielectric Breakdown of SiO2-Based Gate Dielectric Layers

C Bonifacio; K van Benthem

doi:10.1017/S143192761100763X

Evaluation of Defect Structures from In Situ Dielectric Breakdown of SiO2-Based Gate Dielectric Layers

Published online by Cambridge University Press: 08 April 2017

C Bonifacio and

K van Benthem

Show author details

C Bonifacio: Affiliation:
University of California, Davis
K van Benthem: Affiliation:
University of California, Davis

Article contents

Extract

Extract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Type: Abstract
Information: Microscopy and Microanalysis , Volume 17 , Supplement S2 , July 2011 , pp. 1352 - 1353

DOI: https://doi.org/10.1017/S143192761100763X [Opens in a new window]

Article contents

Evaluation of Defect Structures from In Situ Dielectric Breakdown of SiO2-Based Gate Dielectric Layers

Extract

Save article to Kindle

Save article to Dropbox

Save article to Google Drive

Reply to: Submit a response

Your details

You have entered the maximum number of contributors

Conflicting interests