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High-Resolution Radial Distribution Function of Pure Ion-Implanted Amorphous Silicon Measured Using Tilted-Illumination Selected-Area Electron Diffraction

Published online by Cambridge University Press:  28 November 2013

Alexander Gorecki ,
Amelia C.Y. Liu  and
Timothy C. Petersen
Alexander Gorecki
Affiliation:
School of Physics, Monash University, Clayton, Victoria 3800, Australia
Amelia C.Y. Liu*
Affiliation:
School of Physics, Monash University, Clayton, Victoria 3800, Australia Monash Centre for Electron Microscopy, Monash University, Clayton, Victoria 3800, Australia
Timothy C. Petersen
Affiliation:
School of Physics, Monash University, Clayton, Victoria 3800, Australia Monash Centre for Electron Microscopy, Monash University, Clayton, Victoria 3800, Australia
*
*Corresponding author. E-mail: amelia.liu@monash.edu
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Abstract

High-resolution radial distribution functions of as-implanted and thermally relaxed amorphous silicon created by ion implantation were measured using tilted-illumination selected area electron diffraction at room temperature. The diffracted intensities were measured out to a maximum scattering vector 2 sin(θ)/λ of 3.3–3.7 Å−1. The volume-averaged pair-correlation statistics of as-implanted and relaxed ion-implanted amorphous silicon are virtually indistinguishable with coordination numbers of 3.7 ± 0.3 and 3.9 ± 0.3 (for neighbors closer than 3 Å) and average bond angles of 109 ± 0.5° and 110 ± 0.6°, respectively. The atomic rearrangements in ion-implanted amorphous silicon due to a low temperature anneal are subtle.

Keywords

amorphous siliconelectron diffractionradial distribution functionrelaxation anneal
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 20 , Issue 1 , February 2014 , pp. 50 - 54
Copyright
Copyright © Microscopy Society of America 2014 

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