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    Eljarrat, Alberto López-Conesa, Lluís Magén, César García-Lepetit, Noemí Gačević, Žarko Calleja, Enrique Peiró, Francesca and Estradé, Sònia 2016. Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS. Phys. Chem. Chem. Phys., Vol. 18, Issue. 33, p. 23264.

    Eljarrat, Alberto Sastre, Xavier Peiró, Francesca and Estradé, Sónia 2016. Density Functional Theory Modeling of Low-Loss Electron Energy-Loss Spectroscopy in Wurtzite III-Nitride Ternary Alloys. Microscopy and Microanalysis, Vol. 22, Issue. 03, p. 706.

    ELJARRAT, A. LÓPEZ-CONESA, L. ESTRADÉ, S. and PEIRÓ, F. 2016. Electron energy loss spectroscopy on semiconductor heterostructures for optoelectronics and photonics applications. Journal of Microscopy, Vol. 262, Issue. 2, p. 142.

    Eljarrat, Alberto López-Conesa, Lluís López-Vidrier, Julian Hernández, Sergi Garrido, Blas Magén, César Peiró, Francesca and Estradé, Sònia 2014. Retrieving the electronic properties of silicon nanocrystals embedded in a dielectric matrix by low-loss EELS. Nanoscale, Vol. 6, Issue. 24, p. 14971.

    Eljarrat, Alberto López-Conesa, Lluís Rebled, José Manuel Berencén, Yonder Ramírez, Joan Manel Garrido, Blas Magén, César Estradé, Sònia and Peiró, Francesca 2013. Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS. Nanoscale, Vol. 5, Issue. 20, p. 9963.

    Gačević, Ž. Eljarrat, A. Peiró, F. and Calleja, E. 2013. Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces. Journal of Applied Physics, Vol. 113, Issue. 18, p. 183106.


Insight into the Compositional and Structural Nano Features of AlN/GaN DBRs by EELS-HAADF

  • Alberto Eljarrat (a1), Lluís López-Conesa (a1), César Magén (a2) (a3), Žarko Gačević (a4), Sergio Fernández-Garrido (a4), Enrique Calleja (a4), Sónia Estradé (a1) (a5) and Francesca Peiró (a1)
  • DOI:
  • Published online: 09 May 2013

III-V nitride (AlGa)N distributed Bragg reflector devices are characterized by combined high-angle annular dark-field (HAADF) and electron energy loss spectroscopy (EELS) in the scanning transmission electron microscope. Besides the complete structural characterization of the AlN and GaN layers, the formation of AlGaN transient layers is revealed using Vegard law on profiles of the position of the bulk plasmon peak maximum. This result is confirmed by comparison of experimental and simulated HAADF intensities. In addition, we present an advantageous method for the characterization of nano-feature structures using low-loss EELS spectrum image (EEL-SI) analysis. Information from the materials in the sample is extracted from these EEL-SI at high spatial resolution.The log-ratio formula is used to calculate the relative thickness, related to the electron inelastic mean free path. Fitting of the bulk plasmon is performed using a damped plasmon model (DPM) equation. The maximum of this peak is related to the chemical composition variation using the previous Vegard law analysis. In addition, within the context of the DPM, information regarding the structural properties of the material can be obtained from the lifetime of the oscillation. Three anomalous segregation regions are characterized, revealing formation of metallic Al islands.

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J. Arbiol , S. Estrade , J.D. Prades , A. Cirera , F. Furtmayr , C. Stark , A. Laufer , M. Stutzmann , M. Eickhoff , M.H. Gass , A.L. Bleloch , F. Peiro & J.R. Morante (2009). Triple-twin domains in Mg doped GaN wurtzite nanowires: Structural and electronic properties of this zinc-blende-like stacking. Nanotechnology 20(14), 145704145713.

M. Benaissa , L. Gu , M. Korytov , T. Huault , P.A. Van Aken , J. Brault & P. Vennegues (2009). Phase separation in GaN/AlGaN quantum dots. Appl Phys Lett 95(14), 141901141904.

S. Bernal , F. Botana , J. Calvino , C. Lopez-Cartes , J. Perez-Omil & J. Rodriguez-Izquierdo (1998). The interpretation of HREM images of supported metal catalysts using image simulation: Profile view images. Ultramicroscopy 72(3-4), 135164.

G. Brockt & H. Lakner (2000). Nanoscale EELS analysis of dielectric function and bandgap properties in GaN and related materials. Micron 31(3), 435440.

D. Brunner , H. Angerer , E. Bustarret , F. Freudenberg , R. Hopler , R. Dimitrov , O. Ambacher & M. Stutzmann (1997). Optical constants of epitaxial AlGaN films and their temperature dependence. J Appl Phys 82(10), 50905097.

A.D. Dorneich , R.H. French , H. Müllejans , S. Loughlin & M. Rühle (1998). Quantitative analysis of valence electron energy-loss spectra of aluminium nitride. J Microsc 191, 286296.

R.F. Egerton (2009). Electron energy-loss spectroscopy in the TEM. Rep Prog Phys 72, 016502016527.

R.F. Egerton (2011). Electron Energy-Loss Spectroscopy in the Electron Microscope. New York: Springer.

Ž. Gačević , S. Fernández-Garrido , D. Hosseini , S. Estradé , F. Peiró & E. Calleja (2010). InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy. J Appl Phys 108, 113117113124.

K. Iakoubovskii & K. Mitsuishi (2008). Mean free path of inelastic electron scattering in elemental solids and oxides using transmission electron microscopy: Atomic number dependent oscillatory behavior. Phys Rev B 77(10), 104102104109.

M. Ikeda & S. Uchida (2002). Blue violet laser diodes suitable for Blu-ray disk. Phys Status Solidi 194, 407413.

E.J. Kirkland (2010). Advanced Computing in Electron Microscopy. New York: Springer.

S. Lazar , G.A. Bottom , M.-Y. Wu , F.D. Tichelaar & H.W. Zandbergen (2003). Materials science applications of HREELS in near edge structure analysis and low-energy loss spectroscopy. Ultramicroscopy 96(3-4), 535546.

S. Nakamura , S. Pearton & G. Fasol (1997). The Blue Laser Diode. The Complete Story. New York: Springer.

J. Palisaitis , C.-L. Hsiao , M. Junai , M. Xie , V. Darakchieva , J.-F. Carlin , N.G.J. Birch , L. Hultman & P.O.A. Persson (2011). Standard-free composition measurements of AlxIn1–xN by low-loss electron energy loss spectroscopy. Phys Stat Sol RRL 5(2), 5052.

A.M. Sánchez , R. Beanland , M.H. Gass , A.J. Papworth , P.J. Goodhew & M. Hopkinson (2005). Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra. Phys Rev B 72(7), 075339075347.

C.M. Wu , B.P. Zhang , J.Z. Shang , L.E. Cai , J.Y. Zhang , J.Z. Yu & Q.M. Wang (2011). High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD. Semicond Sci Tec 26, 055013055018.

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Microscopy and Microanalysis
  • ISSN: 1431-9276
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