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On the Origin of Extended Resolution in Kelvin Probe Force Microscopy with a Worn Tip Apex

Published online by Cambridge University Press:  05 April 2018

Sergey Y. Luchkin  and
Keith J. Stevenson
Sergey Y. Luchkin*
Affiliation:
Skolkovo Institute of Science and Technology, Nobel St. 3, Moscow 143026, Russian Federation
Keith J. Stevenson
Affiliation:
Skolkovo Institute of Science and Technology, Nobel St. 3, Moscow 143026, Russian Federation
*
*Author for correspondence: Sergey Y. Luchkin, E-mail: s.luchkin@skoltech.ru
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Abstract

In this work we analyzed the effect of the atomic force microscopy probe tip apex shape on Kelvin Probe Force Microscopy (KPFM) potential sensitivity and spatial resolution. It was found that modification of the apex shape from spherical to planar upon thinning of the conductive coating leads to enhanced apex contribution to the total electrostatic force between the probe and the sample. The effect results in extended potential sensitivity and spatial resolution of KPFM. Experimental results were supported by calculations.

Keywords

AFMKPFMelectrostatic forcetip geometryresolution
Type
Software and Instrumentation
Information
Microscopy and Microanalysis , Volume 24 , Issue 2 , April 2018 , pp. 126 - 131
Copyright
© Microscopy Society of America 2018 

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References

Bocquet, F, Nony, L, Loppacher, C and Glatzel, T (2008) Analytical approach to the local contact potential difference on (001) ionic surfaces: Implications for Kelvin probe force microscopy. Phys Rev B 78, 35410.Google Scholar
Boyer, L, Houze, F, Tonck, A, Loubet, J-L and Georges, J-M (1994) The influence of surface roughness on the capacitance between a sphere and a plane. J Phys D Appl Phys 27, 1504–1508.Google Scholar
Brown, KA, Satzinger, KJ and Westervelt, RM (2012) High spatial resolution Kelvin probe force microscopy with coaxial probes. Nanotechnology 23, 115703.Google Scholar
Butt, H-J, Cappella, B and Kappl, M (2005) Force measurements with the atomic force microscope: Technique, interpretation and applications. Surf Sci Rep 59, 1–152.Google Scholar
Colchero, J, Gil, A and Baró, AM (2001) Resolution enhancement and improved data interpretation in electrostatic force microscopy. Phys Rev B 64, 245403.Google Scholar
Douhéret, O, Anand, S, Glatzel, T, Maknys, K and Sadewasser, S (2004) Characterization of quantum wells by cross-sectional Kelvin probe force microscopy. Appl Phy Lett 85, 5245–5247.CrossRefGoogle Scholar
Glatzel, T, Sadewasser, S and Lux-Steiner, MC (2003) Amplitude or frequency modulation-detection in Kelvin probe force microscopy. Appl Surf Sci 210, 84–89.Google Scholar
Glatzel, T, Sadewasser, S, Shikler, R, Rosenwaks, Y and Lux-Steiner, MC (2003) Kelvin probe force microscopy on III–V semiconductors: The effect of surface defects on the local work function. Mater Sci Eng B 102, 138–142.Google Scholar
Hudlet, S, Saint Jean, M, Guthmann, C and Berger, J (1998) Evaluation of the capacitive force between an atomic force microscopy tip and a metallic surface. Eur Phys J B 2, 5–10.Google Scholar
Hutter, JL and Bechhoefer, J (1993) Calibration of atomic‐force microscope tips. Rev Sci Instrum 64, 1868–1873.Google Scholar
Iossel’, YY, Kochanov, ES and Strunskiy, MG (1981) Raschet Electricheskoi Emkosti, 2nd ed. Leningrad: Energoizdat (in Russian).Google Scholar
Jacobs, HO, Leuchtmann, P, Homan, O and Stemmer, A (1998) Resolution and contrast in Kelvin probe force microscopy. J Appl Phys 84, 1168.Google Scholar
Kawai, S, Glatzel, T, Hug, H-J and Meyer, E (2010) Atomic contact potential variations of Si(111)-7 x 7 analyzed by Kelvin probe force microscopy. Nanotechnology 21, 245704.CrossRefGoogle ScholarPubMed
Kirchhoff, G (1877) Zur Theorie des Condensators. Berl. Monatsber, 144–162 (in German).Google Scholar
Kuester, EF (1986) Explicit Approximations for the Static Capacitance of a Microstrip Patch of Arbitrary Shape, Boulder, Colorado.Google Scholar
Law, BM and Rieutord, F (2002) Electrostatic forces in atomic force microscopy. Phys Rev B 66, 35402.Google Scholar
Leung, C, Kinns, H, Hoogenboom, BW, Howorka, S and Mesquida, P (2009) Imaging surface charges of individual biomolecules. Nano Lett 9, 2769–2773.Google Scholar
Machleidt, T, Sparrer, E, Kapusi, D and Franke, K-H (2009) Deconvolution of Kelvin probe force microscopy measurements—methodology and application. Meas Sci Technol 20, 84017.Google Scholar
Mao, B, Tao, Q and Li, G (2012) Quantitative analysis of the resolution and sensitivity of Kelvin probe force microscopy using carbon nanotube functionalized probes. Mea Sci Technol 23, 105404.Google Scholar
Melitz, W, Shen, J, Kummel, AC and Lee, S (2011) Kelvin probe force microscopy and its application. Surf Sci Rep 66, 1–27.Google Scholar
Muhunthan, N, Singh, OP, Toutam, V and Singh, VN (2015) Electrical characterization of grain boundaries of CZTS thin films using conductive atomic force microscopy techniques. Mater Res Bull 70, 373–378.Google Scholar
Nonnenmacher, M, O’Boyle, MP and Wickramasinghe, HK (1991) Kelvin probe force microscopy. Appl Phys Lett 58, 2921.Google Scholar
Panchal, V, Pearce, R, Yakimova, R, Tzalenchuk, A and Kazakova, O (2013) Standardization of surface potential measurements of graphene domains. Sci Rep 3, 2597.Google Scholar
Sader, JE, Chon, JWM and Mulvaney, P (1999) Calibration of rectangular atomic force microscope cantilevers. Rev Sci Instrum 70, 3967–3969.Google Scholar
Sadewasser, S and Glatzel, T (2012) Capacitive crosstalk in AM-Mode KPFM. In Kelvin Probe Force Microscopy, Measuring and Compensating Electrostatic Forces, Sadewasser S and Glatzel T (Eds.), pp. 25–44. Berlin, Heidelberg: Springer-Verlag.Google Scholar
Sadewasser, S, Glatzel, T, Rusu, M, Jäger-Waldau, A and Lux-Steiner, MC (2002) High-resolution work function imaging of single grains of semiconductor surfaces. Appl Phys Lett 80, 2979.Google Scholar
Vinaji, S, Lochthofen, A, Mertin, W, Regolin, I, Gutsche, C, Prost, W, Tegude, FJ and Bacher, G (2009) Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy. Nanotechnology 20, 385702.Google Scholar
Wagner, T, Beyer, H, Reissner, P, Mensch, P, Riel, H, Gotsmann, B and Stemmer, A (2015) Kelvin probe force microscopy for local characterisation of active nanoelectronic devices. Beilstein J Nanotechnol 6, 2193–2206.Google Scholar
Yamauchi, T, Tabuchi, M and Nakamura, A (2004) Size dependence of the work function in InAs quantum dots on GaAs(001) as studied by Kelvin force probe microscopy. Appl Phys Lett 84, 3834–3836.Google Scholar
Zhao, M, Sharma, V, Wei, H, Birge, RR, Stuart, JA, Papadimitrakopoulos, F and Huey, BD (2008) Ultrasharp and high aspect ratio carbon nanotube atomic force microscopy probes for enhanced surface potential imaging. Nanotechnology 19, 235704.Google Scholar