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    D’Angelo, D. Mirabella, S. Bruno, E. Pulvirenti, G. Terrasi, A. Bisognin, G. Berti, M. Bongiorno, C. and Raineri, V. 2008. Role of C in the formation and kinetics of nanovoids induced by He[sup +] implantation in Si. Journal of Applied Physics, Vol. 104, Issue. 2, p. 023501.


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Quantitative Transmission Electron Microscopy Analysis of the Pressure of Helium-Filled Cracks in Implanted Silicon

  • K. Tillmann (a1), N. Hüging (a1), H. Trinkaus (a1) and M. Luysberg (a1)
  • DOI: http://dx.doi.org/10.1017/S1431927604040024
  • Published online: 01 March 2004
Abstract

The pressure of crack-shaped cavities formed in silicon upon implantation with helium and subsequent annealing is quantitatively determined from the measurement of diffraction contrast features visible in transmission electron micrographs taken under well-defined dynamical two-beam conditions. For this purpose, simulated images, based on the elastic displacements associated with a Griffith crack, are matched to experimental micrographs, thus yielding unambiguous quantitative data on the ratio p/μ of the cavity pressure to the silicon matrix shear modulus. Experimental results demonstrate cavity radii of some 10 nm and p/μ values up to 0.22, which may be regarded as sufficiently high for the emission of dislocation loops from the cracks.

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Corresponding author. E-mail: k.tillmann@fz-juelich.de
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Microscopy and Microanalysis
  • ISSN: 1431-9276
  • EISSN: 1435-8115
  • URL: /core/journals/microscopy-and-microanalysis
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