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Spatial Distribution of Dislocations in Relation to a Substructure in High-Quality GaN Film

  • Mino Yang (a1) (a2), Chong-Don Kim (a3), Hee-Goo Kim (a1) and Cheol-Woong Yang (a2)
Abstract

The dislocation distribution of high-quality single-crystal gallium nitride (GaN) films grown by the hybrid vapor phase epitaxy was analyzed. This study examined the domain structure of GaN from the dislocation distribution on the macroscale by optical microscopy. The surface structure of GaN consisted of domains with microcolumns as the substructure. The inner domains contained a lower density of dislocations but a large number of these dislocations were observed along the domain boundaries. The existence of a domain boundary structure doubly increased the total dislocation density.

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Copyright
COPYRIGHT: © Microscopy Society of America 2013 
Corresponding author
*Corresponding author. E-mail: cwyang@skku.edu
References
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Amano, H., Sawaki, N., Akasaki, I. & Toyoda, Y. (1986). Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Appl Phys Lett 48, 353–355.
Andre, Y., Trassoudaine, A., Tourret, J., Cadoret, R., Gil, E., Castelluci, D., Aoude, O. & Disseix, P. (2007). Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers. J Crystal Growth 306, 86–93.
Detchprohm, T., Hiramatsu, K., Amano, H. & Akasaki, I. (1992). Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer. Appl Phys Lett 61, 2688–2690.
Elsner, J., Jones, R., Sitch, P.K., Porezag, V.D., Elstner, M., Frauenheim, T., Heggie, M.I., Öberg, S. & Briddon, P.R. (1997). Theory of threading edge and screw dislocations in GaN. Phys Rev Lett 79, 3672–3675.
Follstaedt, D.M., Missert, N.A., Koleske, D.D., Mitchell, C.C. & Cross, K.C. (2003). Plan-view image contrast of dislocations in GaN. Appl Phys Lett 83, 4797–4799.
Gmeinwieser, N. & Schwarz, U.T. (2007). Pattern formation and directional and spatial ordering of edge dislocations in bulk GaN: Microphotoluminescence spectra and continuum elastic calculations. Phys Rev B 75, 245213.
Hiramatsu, K., Nishiyama, K., Motogaito, A., Miyake, H., Iyechika, Y. & Maeda, T. (1999). Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: Effects of reactor pressure in MOVPE growth. Phys Stat Sol (a) 176, 535–543.
Moram, M.A., Oliver, R.A., Kappers, M.J. & Humphreys, C.J. (2009). The spatial distribution of threading dislocations in gallium nitride films. Adv Mater 21, 3941–3944.
Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T. & Mukai, T. (1995). Superbright green InGaN single-quantum-well-structure light-emitting diodes. Jpn J Appl Phys 34(10B), L1332–L1335.
Ning, X.J., Chien, F.R., Pirouz, P., Yang, J.W. & Asif Khan, M. (1996). Growth defects in GaN films on sapphire: The probable origin of threading dislocations. J Mater Res 11, 580–592.
Oliver, R.A., Kappers, M.J. & Humphreys, C.J. (2006a). Insights into the origin of threading dislocations in GaN/Al2O3 from atomic force microscopy. Appl Phys Lett 89, 011914.
Oliver, R.A., Kappers, M.J., Sumner, J., Datta, R. & Humphreys, C.J. (2006b). Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3. J Crystal Growth 289, 506–514.
Paisley, M.J. & Davis, R.F. (1993). Molecular beam epitaxy of nitride thin films. J Crystal Growth 127, 136–142.
Pond, R.C. (1995). On the characterization of interfacial defects using high resolution electron microscopy. Interface Sci 2, 299–310.
Qian, W., Skowronski, M., de Graef, M., Doverspike, K., Rowland, L.B. & Gaskill, D.K. (1995). Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy. Appl Phys Lett 66, 1252–1254.
Romanov, A.E., Fini, P. & Speck, J.S. (2003). Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability. J Appl Phys 93, 106–114.
Williams, D.B. & Carter, C.B. (1996). Transmission Electron Microscopy. New York: Plenum.
Wu, X.H., Fini, P., Tarsa, E.J., Heying, B., Keller, S., Mishra, U.K., Den Baars, S.P. & Speck, J.S. (1998). Dislocation generation in GaN heteroepitaxy. J Crystal Growth 189/190, 231–243.
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Microscopy and Microanalysis
  • ISSN: 1431-9276
  • EISSN: 1435-8115
  • URL: /core/journals/microscopy-and-microanalysis
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