Strain Analysis of Semiconductor Device by Moiré Fringes in STEM Image

N. Endo; Y. Kondo

doi:10.1017/S1431927613003723

Abstract

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Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Crossref Citations

This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Kondo, Yukihito and Okunishi, Eiji 2014. Magnified pseudo-elemental map of atomic column obtained by Moiré method in scanning transmission electron microscopy. Microscopy, Vol. 63, Issue. 5, p. 391.

Murakami, Y. Sasaki, T.T. Ohkubo, T. and Hono, K. 2015. Strain measurements from Nd2Fe14B grains in sintered magnets using artificial moiré fringes. Acta Materialia, Vol. 101, Issue. , p. 101.

Kondo, Yukihito Endo, Noriaki Fukunaga, Kei-ichi Aoyama, Yoshitaka Asayama, Kyoichiro Lin, Ching Chun and Kim, Hsu 2018. Strain Analysis of FinFET Device Utilizing Moiré Fringes in Scanning Transmission Electron Microscopy. Microscopy and Microanalysis, Vol. 24, Issue. S1, p. 978.

Kondo, Y. Aoyama, Y. Hashiguchi, H. Lin, C. C. Hsu, K. Endo, N. Asayama, K. and Fukunaga, K-I. 2019. Strain measurement of a channel between Si/Ge stressors in a tri-gate field effect transistor utilizing moiré fringes in scanning transmission microscope images. Applied Physics Letters, Vol. 114, Issue. 17,

Lin, Yung-Chang Ji, Hyun Goo Chang, Li-Jen Chang, Yao-Pang Liu, Zheng Lee, Gun-Do Chiu, Po-Wen Ago, Hiroki and Suenaga, Kazu 2020. Scanning Moiré Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials. ACS Nano, Vol. 14, Issue. 5, p. 6034.

Prabhakara, V Jannis, D Béché, A Bender, H and Verbeeck, J 2020. Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique. Semiconductor Science and Technology, Vol. 35, Issue. 3, p. 034002.

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Strain Analysis of Semiconductor Device by Moiré Fringes in STEM Image

Abstract

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