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TEM characterization of GaSb grown on single crystal offcut Silicon (001)

Published online by Cambridge University Press:  04 August 2017

H. L. Porter ,
M. J. Steer ,
A. J. Craven ,
D. McGrouther ,
I. G. Thayne  and
I. MacLaren
H. L. Porter
Affiliation:
School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, UK
M. J. Steer
Affiliation:
School of Engineering, University of Glasgow, Glasgow G12 8LT, UK
A. J. Craven
Affiliation:
School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, UK
D. McGrouther
Affiliation:
School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, UK
I. G. Thayne
Affiliation:
School of Engineering, University of Glasgow, Glasgow G12 8LT, UK
I. MacLaren
Affiliation:
School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, UK

Abstract

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Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 1476 - 1477
Copyright
© Microscopy Society of America 2017 

References

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[2] Chyi, J.I., et al, Appl. Phys. Lett. 54 1989). p. 1016.CrossRefGoogle Scholar
[3] Bobynko, J., MacLaren, I. & Craven, A. J. Ultramicroscopy 149 2015). p. 9.CrossRefGoogle Scholar
[4] Sieg, R.M., et al, J. Elect. Mater 27 1998). p. 900.CrossRefGoogle Scholar
[5] The authors gratefully acknowledge funding from Scottish Enterprise and CENSIS for the MIRAGE programme, as well as support from Western Digital Corporation.Google Scholar