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Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

  • Boya Cui (a1) (a2), D. Bruce Buchholz (a3), Li Zeng (a1), Michael Bedzyk (a1) (a3), Robert P. H. Chang (a1) (a3) and Matthew Grayson (a1) (a2)...


The cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.


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