Skip to main content
×
×
Home

Memristive behavior in BaTiO3/La0.7Sr0.3MnO3 heterostructures integrated with semiconductors

  • Srinivasa Rao Singamaneni (a1) (a2), John Prater (a1) (a2), Bongmook Lee (a3), Veena Misra (a3) and Jay Narayan (a1)...
Abstract

Ferroelectric materials such as BaTiO3 have been studied for emerging non-volatile memory applications. However, most of the previous work has been focused on this material when it was deposited on insulting oxide substrates such as SrTiO3. Unfortunately, this substrate is not suitable for CMOS-based microelectronics applications. This motivated us to carry out the present work. We have studied the resistive switching behavior in BaTiO3/La0.7Sr0.3MnO3 (BTO/LSMO) heterostructures integrated with semiconducting substrates Si (100) using MgO/TiN buffer layers by pulsed laser deposition. Current-Voltage (I-V) measurements were conducted on BTO (500nm)/LSMO (25nm) devices at 200K. We have observed a broad hysteresis in forward and reverse voltage sweeps which is an important property for memory applications. Secondly, the RON/ROFF ratio is estimated at ∼ 150, consistent with the reported numbers (30-100) in the literature. Thirdly, the device is stable at least up to 50 cycles. However, we found that hysteretic behavior was suppressed upon oxygen annealing of the device at 1 atmospheric pressure, 200° C for 1hr, inferring the important role of oxygen vacancies in the resistive switching behavior of BTO/LSMO device. Future work will focus on investigating the correlation between ferroelectricity and resistive switching in these devices using local probe technique piezo force microscopy (PFM) technique.

Copyright
Corresponding author
*(Email: rao.iisc@gmail.com)
References
Hide All
1. Strukov, D.B. and Kohlstedt, H., MRS BULLETIN, 37, 108 (2012).
2. Waser, R. and Aono, Masakazu, Nature Materials, 6, 833 (2007).
3. Lee, J. S., Lee, S., and Noh, T. W., Appl. Phys. Rev., 2, 031303 (2015).
4. Wen, Z., You, L., Wang, J., Li, A., and Wu, D., Appl. Phys. Lett., 103, 132913 (2013).
5. Chanthbouala, A., Crassous, A., Garcia, V., Bouzehouane, K., Fusil, S., Moya, X., Allibe, J., Dlubak, B., Grollier, J., Xavier, S., Deranlot, C., Moshar, A., Proksch, R., Mathur, N. D., Bibes, M. and Barthelemy, A., Nature Nanotechnology, 7, 101 (2012).
6. Park, Y. A., Sung, K. D., Won, C. J., Jung, J. H., and Hur, N., J. Appl. Phys. 114, 094101 (2013).
7. Singamaneni, S. R., Punugupati, S., Prater, J. T., Hunte, F., Narayan, J., J. Appl. Phys., 116, 094103 (2014).
8. Singamaneni, S. R., Fan, W., Prater, J.T., Narayan, J., J. Appl. Phys., 116, 224104 (2014).
9. Singamaneni, S. R., Prater, J.T., Narayan, J., Emerging Materials Research, 4, 141199 (2015).
10. Sawa, A., Materials Today, 11, 28 (2008).
11. Mikheev, E., Hoskins, B. D., Strukov, D. B. and Stemmer, S., Nature Comm., 5, 3990 (2014).
12. Kim, D. S., Lee, C. E., Kim, Y. H. and Kim, Y. T., J. Appl. Phys., 100, 093901(2006)
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Advances
  • ISSN: -
  • EISSN: 2059-8521
  • URL: /core/journals/mrs-advances
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed