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Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors

  • Amrit Laudari (a1), Shubhra Gangopadhyay (a2) and Suchismita Guha (a1)
Abstract
ABSTRACT

A comparative study of ferroelectric and non-ferroelectric-gated organic field-effect transistors (FETs) have been carried out by using a small molecule semiconductor 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) to understand the fundamental aspects of carrier transport in FET architectures. Temperature-dependent current-voltage characteristics from non-ferroelectric dielectric-gated FETs show a clear activated transport, independent of the dielectric constant. While using the ferroelectric dielectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE), where the dielectric constant may be tuned by changing the temperature, a negative temperature coefficient of the carrier mobility is observed beyond 200 K. The polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the discrete nature of traps in TIPS-pentacene results in an effective de-trapping of the shallow trap states into more mobile states.

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*(Email: guhas@missouri.edu)
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S. P. Senanayak , S. Guha , and K. S. Narayan , Phys. Rev. B 85, 115311 (2012).

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MRS Advances
  • ISSN: -
  • EISSN: 2059-8521
  • URL: /core/journals/mrs-advances
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