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Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors

  • Amrit Laudari (a1), Shubhra Gangopadhyay (a2) and Suchismita Guha (a1)
Abstract

A comparative study of ferroelectric and non-ferroelectric-gated organic field-effect transistors (FETs) have been carried out by using a small molecule semiconductor 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) to understand the fundamental aspects of carrier transport in FET architectures. Temperature-dependent current-voltage characteristics from non-ferroelectric dielectric-gated FETs show a clear activated transport, independent of the dielectric constant. While using the ferroelectric dielectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE), where the dielectric constant may be tuned by changing the temperature, a negative temperature coefficient of the carrier mobility is observed beyond 200 K. The polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the discrete nature of traps in TIPS-pentacene results in an effective de-trapping of the shallow trap states into more mobile states.

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*(Email: guhas@missouri.edu)
References
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[1] Schott, S., Gann, E., Thomsen, L., Jung, S.-H., Lee, J.-K., McNeill, C. R., and Sirringhaus, H., Adv. Mater. 27, 7356 (2015).
[2] Senanayak, S. P., Ashar, A. Z., Kanimozhi, C., Patil, S., and Narayan, K. S., Phys. Rev. B 91, 115302 (2015).
[3] Senanayak, S. P., Guha, S., and Narayan, K. S., Phys. Rev. B 85, 115311 (2012).
[4] Laudari, A. and Guha, S., J. Appl. Phys. 117, 105501 (2015).
[5] Zheng, H., Mahajan, B. K., Su, S. C., Mukherjee, S., Gangopadhyay, K., and Gangopadhyay, S., Sci. Rep. 6, 25234 (2016).
[6] Laudari, A. and Guha, S., Phys. Rev. Appl. 6, 044007 (2016).
[7] Gooden, K., Laudari, A., Knotts, G., and Guha, S., Flex. Print. Electron. 1, 015004 (2016).
[8] Knotts, G., Bhaumik, A., Ghosh, K., and Guha, S., Appl. Phys. Lett. 104, 233301 (2014).
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MRS Advances
  • ISSN: -
  • EISSN: 2059-8521
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