Skip to main content

Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors

  • Amrit Laudari (a1), Shubhra Gangopadhyay (a2) and Suchismita Guha (a1)

A comparative study of ferroelectric and non-ferroelectric-gated organic field-effect transistors (FETs) have been carried out by using a small molecule semiconductor 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) to understand the fundamental aspects of carrier transport in FET architectures. Temperature-dependent current-voltage characteristics from non-ferroelectric dielectric-gated FETs show a clear activated transport, independent of the dielectric constant. While using the ferroelectric dielectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE), where the dielectric constant may be tuned by changing the temperature, a negative temperature coefficient of the carrier mobility is observed beyond 200 K. The polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the discrete nature of traps in TIPS-pentacene results in an effective de-trapping of the shallow trap states into more mobile states.

Corresponding author
Hide All
[1] Schott S., Gann E., Thomsen L., Jung S.-H., Lee J.-K., McNeill C. R., and Sirringhaus H., Adv. Mater. 27, 7356 (2015).
[2] Senanayak S. P., Ashar A. Z., Kanimozhi C., Patil S., and Narayan K. S., Phys. Rev. B 91, 115302 (2015).
[3] Senanayak S. P., Guha S., and Narayan K. S., Phys. Rev. B 85, 115311 (2012).
[4] Laudari A. and Guha S., J. Appl. Phys. 117, 105501 (2015).
[5] Zheng H., Mahajan B. K., Su S. C., Mukherjee S., Gangopadhyay K., and Gangopadhyay S., Sci. Rep. 6, 25234 (2016).
[6] Laudari A. and Guha S., Phys. Rev. Appl. 6, 044007 (2016).
[7] Gooden K., Laudari A., Knotts G., and Guha S., Flex. Print. Electron. 1, 015004 (2016).
[8] Knotts G., Bhaumik A., Ghosh K., and Guha S., Appl. Phys. Lett. 104, 233301 (2014).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Advances
  • ISSN: -
  • EISSN: 2059-8521
  • URL: /core/journals/mrs-advances
Please enter your name
Please enter a valid email address
Who would you like to send this to? *



Full text views

Total number of HTML views: 0
Total number of PDF views: 13 *
Loading metrics...

Abstract views

Total abstract views: 259 *
Loading metrics...

* Views captured on Cambridge Core between 2nd May 2017 - 23rd February 2018. This data will be updated every 24 hours.