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Multiferroic magnetoelectric nanostructures for novel device applications

Published online by Cambridge University Press:  04 September 2015

Jia-Mian Hu ,
Tianxiang Nan ,
Nian X. Sun  and
Long-Qing Chen
Jia-Mian Hu
Affiliation:
The Pennsylvania State University, USA; juh34@psu.edu
Tianxiang Nan
Affiliation:
Northeastern University, USA; nan.t@husky.neu.edu
Nian X. Sun
Affiliation:
Northeastern University, USA; n.sun@neu.edu
Long-Qing Chen
Affiliation:
The Pennsylvania State University, USA; lqc3@psu.edu
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Abstract

Multiferroic magnetoelectric nanostructures with coupled magnetization and electric polarization across their interfaces have stimulated intense research activities over the past decade. Such interface-based magnetoelectric coupling can be exploited to significantly improve the performance of many devices such as memories, tunable radio-frequency/microwave devices, and magnetic sensors. In this article, we introduce a number of current or developing technologies and discuss their limitations. We describe how the use of magnetoelectric nanostructures can overcome these limitations to optimize device performance. We also present challenges that need to be addressed in pursuing practical applications of magnetoelectric devices.

Keywords

Nanostructuremagneticferroelectricmemorysensor
Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 9: Obtaining Ultimate Functionalities in Nanocomposites , September 2015 , pp. 728 - 735
Copyright
Copyright © Materials Research Society 2015 

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