- Cited by 19
Alexandrou, Konstantinos Masurkar, Amrita Edrees, Hassan Wishart, James F. Hao, Yufeng Petrone, Nicholas Hone, James and Kymissis, Ioannis 2016. Improving the radiation hardness of graphene field effect transistors. Applied Physics Letters, Vol. 109, Issue. 15, p. 153108.
Hopkins, A.R. Labatete-Goeppinger, A.C. Kim, H. and Katzman, H.A. 2016. Space survivability of carbon nanotube yarn material in low Earth orbit. Carbon, Vol. 107, p. 77.
Islam, Ahmad Ehteshamul 2016. Current Status of Reliability in Extended and Beyond CMOS Devices. IEEE Transactions on Device and Materials Reliability, Vol. 16, Issue. 4, p. 647.
Vishalli, Kaur, Ramneek Raina, K.K. Avasthi, D.K. Jeet, Kiran Srivastava, Alok and Dharamvir, Keya 2016. Study of Single Walled Carbon Nanotubes Irradiated by Swift Heavy Ions. Materials Today: Proceedings, Vol. 3, Issue. 6, p. 2062.
Zhao, Yudan Li, Dongqi Xiao, Lin Liu, Junku Xiao, Xiaoyang Li, Guanhong Jin, Yuanhao Jiang, Kaili Wang, Jiaping Fan, Shoushan and Li, Qunqing 2016. Radiation effects and radiation hardness solutions for single-walled carbon nanotube-based thin film transistors and logic devices. Carbon, Vol. 108, p. 363.
Bushmaker, Adam W. Oklejas, Vanessa Walker, Don Hopkins, Alan R. Chen, Jihan and Cronin, Stephen B. 2015. Radiation Induced Single Ion Surface Effects in Nanoelectronic Circuits. IEEE Transactions on Nuclear Science, Vol. 62, Issue. 6, p. 2926.
Ishii, Satoshi Yabe, Daisuke Koshio, Shigeki Hirao, Toshio Enomoto, Shotaro Konishi, Teruaki and Hamano, Tsuyoshi 2015. 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS). p. 1.
LaGasse, Samuel W. Cress, Cory D. Hughes, Harold L. and Lee, Ji Ung 2015. Atomistic Modeling of Suspended Carbon Nanotube Field Effect Transistors Under Proton Radiation. IEEE Transactions on Nuclear Science, Vol. 62, Issue. 6, p. 2881.
Rossi, Jamie E. Cress, Cory D. Merrill, Andrew Soule, Karen J. Cox, Nathanael D. and Landi, Brian J. 2015. Intrinsic diameter dependent degradation of single-wall carbon nanotubes from ion irradiation. Carbon, Vol. 81, p. 488.
Bushmaker, Adam W. Walker, Don Mann, Colin J. Oklejas, Vanessa Hopkins, Alan R. Amer, Moh. R. and Cronin, Stephen B. 2014. Single Event Effects in Carbon Nanotube-Based Field Effect Transistors Under Energetic Particle Radiation. IEEE Transactions on Nuclear Science, Vol. 61, Issue. 6, p. 2839.
Cox, Nathanael D. Rossi, Jamie E. Cress, Cory D. Merrill, Andrew Crompton, Kyle R. and Landi, Brian J. 2014. Spatially Selective Au Nanoparticle Deposition and Raman Analysis of Ion-Irradiated Single-Wall Carbon Nanotubes. The Journal of Physical Chemistry C, Vol. 118, Issue. 25, p. 14031.
Cress, Cory 2014. Carbon Nanoelectronics. Electronics, Vol. 3, Issue. 1, p. 22.
Francis, S. Ashley Petrosky, James C. McClory, John W. and Cress, Cory D. 2014. Effects of Proton and X-ray Irradiation on Graphene Field-Effect Transistors with Thin Gate Dielectrics. IEEE Transactions on Nuclear Science, Vol. 61, Issue. 6, p. 3010.
Francis, S. Ashley Cress, Cory D. McClory, John W. Moore, Elizabeth A. and Petrosky, James C. 2013. Characterization of Radiation Damage in Carbon Nanotube Field-Effect Transistors. IEEE Transactions on Nuclear Science, Vol. 60, Issue. 6, p. 4087.
Islam, Ahmad 2013. Variability and Reliability of Single-Walled Carbon Nanotube Field Effect Transistors. Electronics, Vol. 2, Issue. 4, p. 332.
Cress, Cory D. McMorrow, Julian J. Robinson, Jeremy T. Landi, Brian J. Hubbard, Seth M. and Messenger, Scott R. 2012. Radiation Effects in Carbon Nanoelectronics. Electronics, Vol. 1, Issue. 2, p. 23.
Cress, C. D. Champlain, J. G. Esqueda, I. S. Robinson, J. T. Friedman, A. L. and McMorrow, J. J. 2012. Total Ionizing Dose Induced Charge Carrier Scattering in Graphene Devices. IEEE Transactions on Nuclear Science, Vol. 59, Issue. 6, p. 3045.
McMorrow, Julian J. Cress, Cory D. and Affouda, Chaffra A. 2012. Charge Injection in High-κ Gate Dielectrics of Single-Walled Carbon Nanotube Thin-Film Transistors. ACS Nano, Vol. 6, Issue. 6, p. 5040.
Rossi, Jamie E. Cress, Cory D. Helenic, Alysha R. Schauerman, Chris M. DiLeo, Roberta A. Cox, Nathanael D. Messenger, Scott R. Weaver, Brad D. Hubbard, Seth M. and Landi, Brian J. 2012. Ion irradiation of electronic-type-separated single wall carbon nanotubes: A model for radiation effects in nanostructured carbon. Journal of Applied Physics, Vol. 112, Issue. 3, p. 034314.
Check if you have access via personal or institutional login
We investigate the radiation response of single-walled carbon nanotube (SWCNT) thin-film transistors fabricated with 23 nm silicon oxynitride gate dielectric layers, for total ionizing doses (TIDs) of Co-60 gamma irradiation up to 2 Mrad(Si). Irradiations with ±1 MV/cm across the gate dielectric have little effect on the threshold voltage, yielding shifts of less than ±0.25 V and no detrimental effect on SWCNT mobility or maximum drain current. This illustrates the need to consider the total device material composition when investigating the radiation response of carbon nanoelectronics and substantiates the applicability of SWCNT-based nanoelectronics for use in high TID environments.
This list contains references from the content that can be linked to their source. For a full set of references and notes please see the PDF or HTML where available.1.C.D. Cress , C.M. Schauerman , B.J. Landi , S.R. Messenger , R.P. Raffaelle , and R.J. Walters : Radiation effects in single-walled carbon nanotube papers. J. Appl. Phys. 107, 014316 (2010).
2.C. Wang , K. Ryu , A. Badmaev , J. Zhang , and C. Zhou : Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes. ACS Nano 5, 1147–1153 (2011).
3.L. Nougaret , H. Happy , G. Dambrine , V. Derycke , J-P. Bourgoin , A.A. Green , and M.C. Hersam : 80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes. Appl. Phys. Lett. 94, 243505 (2009).
4.M. Engel , J. Small , M. Steiner , M. Freitag , A. Green , M. Hersam , and P. Avouris : Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays. ACS Nano 2, 2445–2452 (2008).
5.C. Rutherglen , D. Jain , and P. Burke : Nanotube electronics for radiofrequency applications. Nat. Nanotechnol. 4, 811 (2009).
6.Z. Zhang , S. Wang , Z. Wang , L. Ding , T. Pei , Z. Hu , X. Liang , Q. Chen , Y. Li , and L-M. Peng : Almost perfectly symmetric SWCNT-based CMOS devices and scaling. ACS Nano 3, 3781–3787 (2009).
7.T. Oldham and F. McLean : Total ionizing dose effects in MOS oxides and devices. IEEE Trans. Nucl. Sci. 50, 483–499 (2003).
8.X. Tang , Y. Yang , W. Kim , Q. Wang , P. Qi , and H. Dai : Measurement of ionizing radiation using carbon nanotube field effect transistor. Phys. Med. Biol. 50, N23–N31 (2005).
10.J-H. Liao , J-Y. Hsieh , H-J. Lin , W-Y. Tang , C-L. Chiang , Y.-S. Lo , T-B. Wu , L-W. Yang , T. Yang , K-C. Chen , and C-Y. Lu : Physical and electrical characteristics of silicon oxynitride films with various refractive indices. J. Phys. D: Appl. Phys. 42, 175102 (2009).
11.H. Hughes and J. Benedetto : Radiation effects and hardening of MOS technology: devices and circuits. IEEE Trans. Nucl. Sci. 50, 500–521 (2003).
12.V. Le Thanh , D. Bouchier , and D. Débarre : Fabrication of SiGe quantum dots on a Si(100) surface. Phys. Rev. B 56, 10505–10510 (1997).
13.G. Pietsch : Hydrogen on Si: Ubiquitous surface termination after wet-chemical processing. Appl. Phys A: Mater. Sci Process 60, 347–363 (1995).
Email your librarian or administrator to recommend adding this journal to your organisation's collection.
- ISSN: 2159-6859
- EISSN: 2159-6867
- URL: /core/journals/mrs-communications