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    Denning, D. Guyonnet, J. and Rodriguez, B. J. 2016. Applications of piezoresponse force microscopy in materials research: from inorganic ferroelectrics to biopiezoelectrics and beyond. International Materials Reviews, Vol. 61, Issue. 1, p. 46.

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    Zeng, Guosong Tan, Chee-Keong Tansu, Nelson and Krick, Brandon A. 2016. Ultralow wear of gallium nitride. Applied Physics Letters, Vol. 109, Issue. 5, p. 051602.

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    Espinosa, Horacio D. Bernal, Rodrigo A. and Minary-Jolandan, Majid 2012. A Review of Mechanical and Electromechanical Properties of Piezoelectric Nanowires. Advanced Materials, Vol. 24, Issue. 34, p. 4656.

    Minary-Jolandan, Majid Bernal, Rodrigo A. Kuljanishvili, Irma Parpoil, Victor and Espinosa, Horacio D. 2012. Individual GaN Nanowires Exhibit Strong Piezoelectricity in 3D. Nano Letters, Vol. 12, Issue. 2, p. 970.


Strong piezoelectricity in individual GaN nanowires

  • Majid Minary-Jolandan (a1), Rodrigo A. Bernal (a1) and Horacio D. Espinosa (a1)
  • DOI:
  • Published online: 01 September 2011

GaN nanowires are promising building blocks for future nanoelectronics, optoelectronic devices, and nanogenerators. Here, we report on strong piezoelectricity in individual single-crystal GaN nanowires revealed by direct measurement of the piezoelectric constant using piezoresponse force microscopy. Our experimental results show that individual c-axis GaN nanowires, with a characteristic dimension as small as 65 nm, show a shear piezoelectric constant of d15 ~ 10 pm/V, which is several times that measured in bulk. The revealed strong piezoelectricity could open promising opportunities for application of GaN nanowires in nanowire-based sensors and generators for self-powered nanodevices.

Corresponding author
Address all correspondence to Horacio D. Espinosa at
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MRS Communications
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