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TaWSi amorphous metal thin films: composition tuning to improve thermal stability

Published online by Cambridge University Press:  04 September 2017

John M. McGlone*
Affiliation:
Department of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-5501, USA
Kristopher R. Olsen
Affiliation:
Department of Chemistry, Oregon State University, 153 Gilbert Hall, Corvallis, Oregon 97331-4003, USA
William F. Stickle
Affiliation:
Hewlett-Packard Company, Corvallis, Oregon 97333, USA
James E. Abbott
Affiliation:
3D NanoColor, 1110 NE Circle Blvd, Corvallis, Oregon 97330, USA
Roberto A. Pugliese
Affiliation:
Hewlett-Packard Company, Corvallis, Oregon 97333, USA
Greg S. Long
Affiliation:
Hewlett-Packard Company, Corvallis, Oregon 97333, USA
Douglas A. Keszler
Affiliation:
Department of Chemistry, Oregon State University, 153 Gilbert Hall, Corvallis, Oregon 97331-4003, USA
John F. Wager
Affiliation:
Department of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-5501, USA
*
Address all correspondence to John M. McGlone at johnmmcglone@gmail.com and mcglonej@oregonstate.edu
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Abstract

We deposited TaWSi amorphous metal thin films to determine how composition affects film crystallization and oxidation at high temperatures. Films were deposited by magnetron sputtering from targets of nominal compositions Ta : W : Si = 40 : 40 : 20, 30 : 50 : 20, and 30 : 30 : 40, and studied by electron probe microanalysis, electron microscopy, electrical methods, x-ray diffraction, x-ray photoelectron spectroscopy, and atomic-force microscopy. All films remained amorphous to 800 °C or higher temperatures. Films prepared from the target composition 30 : 30 : 40 yielded the film composition Ta41.7W38.4Si19.9, which retained its film integrity and amorphous structure to 1100 °C, even after annealing in air.

Type
Research Letters
Copyright
Copyright © Materials Research Society 2017 

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Footnotes

These authors share first authorship.

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