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Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics

  • C.D. Cress (a1), J.J. McMorrow (a2), J.T. Robinson (a1), A.L. Friedman (a3), H.L. Hughes (a1), B.D. Weaver (a1) and B.J. Landi (a4)...

We investigate the radiation response of single-walled carbon nanotube (SWCNT) thin-film transistors fabricated with 23 nm silicon oxynitride gate dielectric layers, for total ionizing doses (TIDs) of Co-60 gamma irradiation up to 2 Mrad(Si). Irradiations with ±1 MV/cm across the gate dielectric have little effect on the threshold voltage, yielding shifts of less than ±0.25 V and no detrimental effect on SWCNT mobility or maximum drain current. This illustrates the need to consider the total device material composition when investigating the radiation response of carbon nanoelectronics and substantiates the applicability of SWCNT-based nanoelectronics for use in high TID environments.

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1. C.D. Cress , C.M. Schauerman , B.J. Landi , S.R. Messenger , R.P. Raffaelle , and R.J. Walters : Radiation effects in single-walled carbon nanotube papers. J. Appl. Phys. 107, 014316 (2010).

2. C. Wang , K. Ryu , A. Badmaev , J. Zhang , and C. Zhou : Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes. ACS Nano 5, 11471153 (2011).

3. L. Nougaret , H. Happy , G. Dambrine , V. Derycke , J-P. Bourgoin , A.A. Green , and M.C. Hersam : 80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes. Appl. Phys. Lett. 94, 243505 (2009).

4. M. Engel , J. Small , M. Steiner , M. Freitag , A. Green , M. Hersam , and P. Avouris : Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays. ACS Nano 2, 24452452 (2008).

5. C. Rutherglen , D. Jain , and P. Burke : Nanotube electronics for radiofrequency applications. Nat. Nanotechnol. 4, 811 (2009).

6. Z. Zhang , S. Wang , Z. Wang , L. Ding , T. Pei , Z. Hu , X. Liang , Q. Chen , Y. Li , and L-M. Peng : Almost perfectly symmetric SWCNT-based CMOS devices and scaling. ACS Nano 3, 37813787 (2009).

7. T. Oldham and F. McLean : Total ionizing dose effects in MOS oxides and devices. IEEE Trans. Nucl. Sci. 50, 483499 (2003).

8. X. Tang , Y. Yang , W. Kim , Q. Wang , P. Qi , and H. Dai : Measurement of ionizing radiation using carbon nanotube field effect transistor. Phys. Med. Biol. 50, N23N31 (2005).

10. J-H. Liao , J-Y. Hsieh , H-J. Lin , W-Y. Tang , C-L. Chiang , Y.-S. Lo , T-B. Wu , L-W. Yang , T. Yang , K-C. Chen , and C-Y. Lu : Physical and electrical characteristics of silicon oxynitride films with various refractive indices. J. Phys. D: Appl. Phys. 42, 175102 (2009).

11. H. Hughes and J. Benedetto : Radiation effects and hardening of MOS technology: devices and circuits. IEEE Trans. Nucl. Sci. 50, 500521 (2003).

12. V. Le Thanh , D. Bouchier , and D. Débarre : Fabrication of SiGe quantum dots on a Si(100) surface. Phys. Rev. B 56, 1050510510 (1997).

13. G. Pietsch : Hydrogen on Si: Ubiquitous surface termination after wet-chemical processing. Appl. Phys A: Mater. Sci Process 60, 347363 (1995).

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MRS Communications
  • ISSN: 2159-6859
  • EISSN: 2159-6867
  • URL: /core/journals/mrs-communications
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