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(110) InAs Quantum Dots: Growth, Single-Dot Luminescence and Cleaved Edge Alignment

Published online by Cambridge University Press:  26 February 2011

D. Wasserman ,
E. A. Shaner ,
S. A. Lyon ,
M. Hadjipanayi ,
A. C. Maciel  and
J. F. Ryan
D. Wasserman
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
E. A. Shaner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. A. Lyon
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
M. Hadjipanayi
Affiliation:
Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
A. C. Maciel
Affiliation:
Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
J. F. Ryan
Affiliation:
Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
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Abstract

The formation of InAs self-assembled quantum dots on (110) GaAs substrates is demonstrated. These dots form with significantly lower densities than InAs dots grown on (100) GaAs. The low density growth mode of these InAs nanostructures allows for the fabrication of devices capable of electroluminescence from individual quantum dots. Such a device has been fabricated with conventional photolithography and its emission spectra characterized. Additionally, because GaAs cleaves naturally along the (110) crystal plane, the ability to grow InAs quantum dots on (110) GaAs substrates allows for the growth of these dots on the cleaved edges of GaAs first growth samples containing InGaAs strain layers of varying thickness and In fraction. 100% linear alignment of InAs quantum dots over these InGaAs strain layers is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B1.5
Copyright
Copyright © Materials Research Society 2005

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