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1.54μm luminescence of β-FeSi2 grown on Au-coated Si substrates

Published online by Cambridge University Press:  16 January 2012

Kensuke Akiyama ,
Hiroshi Funakubo  and
Masaru Itakura
Kensuke Akiyama
Affiliation:
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Masaru Itakura
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
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Abstract

A clear PL spectrum was observed from β-FeSi2 grains on gold (Au)-coated (100)Si substrates, and indicated the formation of crystal with the same high quality level as the β-FeSi2 on a copper (Cu)-coated Si substrate. Moreover, the temperature dependence of photoluminescence peak intensities showed lower density of the nonradiative recombination center in β-FeSi2 grains on Au-coated Si substrates than that of β-FeSi2 film on Cu-coated Si. Au was not detected in β-FeSi2 grains by STEM-EDX observation, while Cu was observed in the grains and grain boundaries of β-FeSi2 and rolled as non-radiative recombination center.

Keywords

luminescencesemiconductingcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-19
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Borisenko, V. ed., Semiconducting Silicides (Springer-Verlag, Berlin, 2000).Google Scholar
2. Ojima, K., Yamatsugu, H., Wen, C., Sudoh, M. and Yamada, K., Thin Solid Films 381, 267 (2001).Google Scholar
3. Suemasu, T., Takakura, K., Li, C., Ozawa, Y., Kumagai, Y. and Hasegawa, F., Thin Solid Films, 461, 209 (2004).Google Scholar
4. Hunt, T. D., Reeson, K. J., Homewood, K. P., Teon, S. W., Gwilliam, R. M. and Sealy, B. J., Nucl. Instrum. Met. Phys. Res. B 84, 168 (1994).Google Scholar
5. Katsumata, H., Makita, Y., Kobayashi, N., Shibata, H., Hasegawa, M., Akenov, I., Kimura, S., Obara, A. and Uekusa, S., J. Appl. Phys. 80, 5995 (1996).Google Scholar
6. Maeda, Y., Terai, Y. and Itakura, M., Optical Materials 27, 920 (2004).Google Scholar
7. Akiyama, K., Kaneko, S., Terai, Y., Maeda, Y. and Funakubo, H., Jpn. J. Appl. Phys. 44, L303 (2005).Google Scholar
8. Maeda, Y., Terai, Y. and Itakura, M., Jpn. J. Appl. Phys. 44, 2502 (2004).Google Scholar
9. Akiyama, K., Kaneko, S., Funakubo, H. and Itakura, M., Appl. Phys. Lett. 91, 071903 (2007).Google Scholar
10. Akiyama, K., Itakura, M., Kaneko, S., Funakubo, H. and Maeda, Y., Thin Solid Films 515, 8144 (2007).Google Scholar
11. Hansen, M. and Anderko, K., Constitution of Binary Alloys, second ed. (McGraw-Hill, New York, 1985).Google Scholar
12. Hunt, T. D., Reeson, K. J., Gwilliam, R. M., Homewood, K. P., Wilson, R. J. and Sealy, B. J., J. Lumin. 57, 25 (1993).Google Scholar
13. Martinelli, L., Grilli, E., Migas, D. B., Miglio, L., Marabelli, F., Soci, C., Geddo, M., Grimaldi, M. G. and Spinella, C., Phys. Rev. B 66, 085320 (2002).Google Scholar
14. Maeda, Y., Terai, Y., Itakura, M. and Kuwano, N., Thin Solid Films 461, 160 (2004).Google Scholar
15. Pankove, J. I., Optical Process in Semiconductor (Prentice-Hall, Englewood Cliffs, NJ, 1971).Google Scholar
16. Maeda, Y. and Terai, Y., Extended Abstracts of The 52nd Spring Meet. Jpn. Soc. Appl. Phys. Related Soc., 31p-YC-10 (2005).Google Scholar